APA (7th ed.) Citation

Kobayashi, M., Tagawa, Y., Mo, F., Saraya, T., & Hiramoto, T. (2019). Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process. IEEE journal of the Electron Devices Society, 7, 134-139. https://doi.org/10.1109/JEDS.2018.2885932

Chicago Style (17th ed.) Citation

Kobayashi, Masaharu, Yusaku Tagawa, Fei Mo, Takuya Saraya, and Toshiro Hiramoto. "Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process." IEEE Journal of the Electron Devices Society 7 (2019): 134-139. https://doi.org/10.1109/JEDS.2018.2885932.

MLA (9th ed.) Citation

Kobayashi, Masaharu, et al. "Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process." IEEE Journal of the Electron Devices Society, vol. 7, 2019, pp. 134-139, https://doi.org/10.1109/JEDS.2018.2885932.