Microstructure and electrical properties of Lu_2O_3-doped ZnO-Bi_2O_3-based varistor ceramics

Lu2O3-doped ZnO-Bi2O3-based varistor ceramics samples were prepared by a conventional mixed oxide route and sintered at temperatures in the range of 900-1 000°C,and the microstructures of the varistor ceramics samples were characterized by X-ray diffractometry(XRD)and scanning electron microscopy(SE...

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Published inTransactions of Nonferrous Metals Society of China Vol. 20; no. 12; pp. 2303 - 2308
Main Author 徐东 史小锋 程晓农 杨娟 樊曰娥 袁宏明 施利毅
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 2010
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ISSN1003-6326
DOI10.1016/S1003-6326(10)60645-0

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Summary:Lu2O3-doped ZnO-Bi2O3-based varistor ceramics samples were prepared by a conventional mixed oxide route and sintered at temperatures in the range of 900-1 000°C,and the microstructures of the varistor ceramics samples were characterized by X-ray diffractometry(XRD)and scanning electron microscopy(SEM);at the same time,the electrical properties and V—I characteristics of the varistor ceramics samples were investigated by a DC parameter instrument for varistors.The results show that the ZnO-Bi2O3-based varistor ceramics with 0.3%Lu2O3(molar fraction)sintered at 950°C exhibit comparatively ideal comprehensive electrical properties.The XRD analysis of the samples shows the presence of ZnO,Bi-rich,spinel Zn7Sb2O12 and Lu2O3-based phases.
Bibliography:ZnO-Bi2O3 ceramics; varistor; rare earth; electrical properties
43-1239/TG
electrical properties
ZnO-Bi2O3 ceramics
rare earth
varistor
TN104.3
TQ174.758
ISSN:1003-6326
DOI:10.1016/S1003-6326(10)60645-0