低温等离子体接枝改性聚四氟乙烯薄膜表面无钯化学镀铜
通过低温等离子体接枝改性方法将丙烯酸（Acrylic acid，AAc）接枝聚合于聚四氟乙烯fPolytetrafluoroethylene，PTFE）薄膜表面，随后进行无钯化学镀铜，制备出表面镀铜的PTFE薄膜（PTFE-g-PAAc-Cu）。衰减全反射傅里叶变换红外光谱（ATR．FTIR）测试结果表明，丙烯酸成功地接枝于PTFE薄膜表面；通过扫描电镜（Scanning electron microscopy，SEM）和原子力显微镜（Atomicforcemicroscopy,AFM）观察发现，镀铜均匀沉积于PTFE薄膜表面；3M胶带粘贴方法（ASTMD3359标准）评估结果表明，铜层与PT...
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| Published in | 辐射研究与辐射工艺学报 Vol. 34; no. 4; pp. 32 - 39 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
中国科学院上海应用物理研究所 嘉定园区上海201800
2016
中国科学院大学 北京100049%中国科学院上海应用物理研究所 嘉定园区上海201800%中国科学院上海应用物理研究所 嘉定园区上海201800 上海科技大学物质科学与技术学院 上海200031 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1000-3436 |
| DOI | 10.11889/j.1000-3436.2016.rrj.34.040301 |
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| Abstract | 通过低温等离子体接枝改性方法将丙烯酸（Acrylic acid，AAc）接枝聚合于聚四氟乙烯fPolytetrafluoroethylene，PTFE）薄膜表面，随后进行无钯化学镀铜，制备出表面镀铜的PTFE薄膜（PTFE-g-PAAc-Cu）。衰减全反射傅里叶变换红外光谱（ATR．FTIR）测试结果表明，丙烯酸成功地接枝于PTFE薄膜表面；通过扫描电镜（Scanning electron microscopy，SEM）和原子力显微镜（Atomicforcemicroscopy,AFM）观察发现，镀铜均匀沉积于PTFE薄膜表面；3M胶带粘贴方法（ASTMD3359标准）评估结果表明，铜层与PTFE薄膜粘结牢固，3M胶带未能够将铜层与PTFE薄膜分离开；电性能测试结果表明，PTFE-g-PAAc-Cu的表面电阻（R5）降至1．27×10-2Ω／sq，电阻率降至50．1μΩ·cm，其导电性由绝缘体提高到导体水平（导体的电阻率范围为1～103μΩ·cm），有望在柔性覆铜板领域获得应用。 |
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| AbstractList | TL13; 通过低温等离子体接枝改性方法将丙烯酸(Acrylic acid,AAc)接枝聚合于聚四氟乙烯(Polytetrafluoroethylene,PTFE)薄膜表面,随后进行无钯化学镀铜,制备出表面镀铜的PTFE薄膜(PTFE-g-PAAc-Cu).衰减全反射傅里叶变换红外光谱(ATR-FTIR)测试结果表明,丙烯酸成功地接枝于PTFE薄膜表面;通过扫描电镜(Scanning electron microscopy,SEM)和原子力显微镜(Atomic force microscopy,AFM)观察发现,镀铜均匀沉积于PTFE薄膜表面;3M胶带粘贴方法(ASTM D3359标准)评估结果表明,铜层与PTFE薄膜粘结牢固,3M胶带未能够将铜层与PTFE薄膜分离开;电性能测试结果表明,PTFE-g-PAAc-Cu的表面电阻(Rs)降至1.27×10-2 Ω/sq,电阻率降至50.1μΩ·cm,其导电性由绝缘体提高到导体水平(导体的电阻率范围为1～103 μΩ·cm),有望在柔性覆铜板领域获得应用. 通过低温等离子体接枝改性方法将丙烯酸（Acrylic acid，AAc）接枝聚合于聚四氟乙烯fPolytetrafluoroethylene，PTFE）薄膜表面，随后进行无钯化学镀铜，制备出表面镀铜的PTFE薄膜（PTFE-g-PAAc-Cu）。衰减全反射傅里叶变换红外光谱（ATR．FTIR）测试结果表明，丙烯酸成功地接枝于PTFE薄膜表面；通过扫描电镜（Scanning electron microscopy，SEM）和原子力显微镜（Atomicforcemicroscopy,AFM）观察发现，镀铜均匀沉积于PTFE薄膜表面；3M胶带粘贴方法（ASTMD3359标准）评估结果表明，铜层与PTFE薄膜粘结牢固，3M胶带未能够将铜层与PTFE薄膜分离开；电性能测试结果表明，PTFE-g-PAAc-Cu的表面电阻（R5）降至1．27×10-2Ω／sq，电阻率降至50．1μΩ·cm，其导电性由绝缘体提高到导体水平（导体的电阻率范围为1～103μΩ·cm），有望在柔性覆铜板领域获得应用。 |
| Author | 何欣钟 李荣 高乾宏 吴国忠 |
| AuthorAffiliation | 中国科学院上海应用物理研究所嘉定园区,上海201800 中国科学院大学,北京100049 上海科技大学物质科学与技术学院,上海200031 |
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| Author_FL | GAO Qianhong LI Rong WU Guozhong HE Xinzhong |
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| DOI | 10.11889/j.1000-3436.2016.rrj.34.040301 |
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| DocumentTitleAlternate | Low temperature plasma graft polymerization of acrylic acid on polytetrafluoroethylene film for Pd-free electroless copper deposition |
| DocumentTitle_FL | Low temperature plasma graft polymerization of acrylic acid on polytetrafluoroethylene film for Pd-free electroless copper deposition |
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| Keywords | 丙烯酸 Grafting modification 化学镀铜 Acrylic acid Polytetrafluoroethylene film Electroless copper deposition 接枝改性 Low temperature plasma 聚四氟乙烯薄膜 低温等离子体 |
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| Notes | 31-1258/TL Polytetrafluoroethylene film, Low temperature plasma, Grafting modification, Acrylic acid,Electroless copper deposition Acrylic acid （AAc） was grafted onto the surface of polytetrafluoroethylene （PTFE） film by low temperature plasma pretreatment. Subsequently, a thin copper layer was coated on the surface of the modified PTFE film （PTFE-g-PAAc） by palladium-free electroless copper deposition. Attenuated total reflectance Fourier transform infrared （ATR-FTIR） spectroscopy showed that acrylic acid was successfully grafted onto the surface of the PTFE film. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） showed that a thin copper layer was uniformly deposited on the surface of the PTFE film. 3M taping method assessment according to ASTM D3359 indicated that the copper layer was tightly bonded on the film so that 3M tape could not tear down the copper layer from the surface of PTFE film. Electrical performance showed that the surface resistance （Rs） and resistivity of PTFE-g-PAAc-Cu |
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| PublicationTitle | 辐射研究与辐射工艺学报 |
| PublicationTitleAlternate | Journal of Radiation Research and Radiation Processing |
| PublicationTitle_FL | Journal of Radiation Research and Radiation Processing |
| PublicationYear | 2016 |
| Publisher | 中国科学院上海应用物理研究所 嘉定园区上海201800 中国科学院大学 北京100049%中国科学院上海应用物理研究所 嘉定园区上海201800%中国科学院上海应用物理研究所 嘉定园区上海201800 上海科技大学物质科学与技术学院 上海200031 |
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| Snippet | 通过低温等离子体接枝改性方法将丙烯酸（Acrylic acid，AAc）接枝聚合于聚四氟乙烯fPolytetrafluoroethylene，PTFE）薄膜表面，随后进行无钯化学镀铜，制备出表面镀铜... TL13; 通过低温等离子体接枝改性方法将丙烯酸(Acrylic acid,AAc)接枝聚合于聚四氟乙烯(Polytetrafluoroethylene,PTFE)薄膜表面,随后进行无钯化学镀铜,制备出表面镀铜... |
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| SubjectTerms | 丙烯酸 低温等离子体 化学镀铜 接枝改性 聚四氟乙烯薄膜 |
| Title | 低温等离子体接枝改性聚四氟乙烯薄膜表面无钯化学镀铜 |
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