水相环境对^239Pu在高庙子膨润土中吸附行为的影响

以高庙子膨润土作为吸附介质，通过静态吸附实验，研究了高庙子膨润土在不同水相环境中对核素^239Pu的吸附行为。探讨了接触时间、水相pH值、离子种类以及离子浓度等因素对吸附行为的影响。研究结果表明：高庙子膨润土对钚具有很强的吸附能力，吸附率达到99％以上，且吸附速率较快，4d即可达到吸附平衡。随着水相pH值增大，膨润土对钚的吸附能力逐渐增强。水相中CO3^2-、Fe^3＋-和Ca^2＋对钚吸附有较强抑制作用，并且当离子浓度小于0．02mol／L时，随着浓度的增大，分配系数Ka值逐渐减小；当离子浓度大于0．02mol／L时，分配系数Kd值基本趋于稳定。...

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Bibliographic Details
Published in核化学与放射化学 Vol. 35; no. 4; pp. 247 - 251
Main Author 宿吉龙 庹先国 冷阳春 李平川 岳萍 邓晓颖
Format Journal Article
LanguageChinese
Published 西南科技大学核废物与环境安全国防重点学科实验室,四川绵阳 621010 2013
成都理工大学 核技术与自动化工程学院,四川成都,610059%成都理工大学 地质灾害防治与地质环境保护国家重点实验室,四川成都610059
Subjects
239Pu
分配系数Kd
吸附
高庙子膨润土
239Pu
GMZ bentonite
吸附
adsorption behavior
高庙子膨润土
Kd
分配系数Kd
Online AccessGet full text
ISSN0253-9950
DOI10.7538/hhx.2013.35.04.0247

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Summary:以高庙子膨润土作为吸附介质，通过静态吸附实验，研究了高庙子膨润土在不同水相环境中对核素^239Pu的吸附行为。探讨了接触时间、水相pH值、离子种类以及离子浓度等因素对吸附行为的影响。研究结果表明：高庙子膨润土对钚具有很强的吸附能力，吸附率达到99％以上，且吸附速率较快，4d即可达到吸附平衡。随着水相pH值增大，膨润土对钚的吸附能力逐渐增强。水相中CO3^2-、Fe^3＋-和Ca^2＋对钚吸附有较强抑制作用，并且当离子浓度小于0．02mol／L时，随着浓度的增大，分配系数Ka值逐渐减小；当离子浓度大于0．02mol／L时，分配系数Kd值基本趋于稳定。
Bibliography:The adsorption of ^239Pu on Gaomiaozi（GMZ） bentonite was studied in different ionic environment by the static adsorption experiment. The influence of the contact time,pH, the different kinds of ions and ionic concentration on the adsorption behavior was also studied. The experimental results show the adsorption ability of ^239Pu on GMZ bentonite is good, and the adsorption rate is fast, four days it can achieve adsorption equilibrium. The adsorption capacity of bentonite to ^239Pu increases with increasing of pH value in water phase. The adsorption of ^239Pu on GMZ bentonite is strongly hindered by CO3^2- , Fe^3＋ and Ca^2＋. The Kd value increases with the concentration increasing while ionic concentration less than 0.02 mol/L. The Kd value is not affected by ionic concentration while ionic concentra- tion more than 0.02 mol/L.
GMZ bentonite; adsorption behavior ; ^239 Pu ; Kd
11-2045/TL
SU Ji-long , TUO Xian-guo , LENG Yang-chun, LI Ping-chuan , YUE Ping , DENG Xiao-ying（ 1. College of Nuclear Technology and Aut
ISSN:0253-9950
DOI:10.7538/hhx.2013.35.04.0247