A 5.4mW and 6.1% efficiency fixed-tuned 214GHz frequency doubler with Schottky barrier diodes

• Published in: 高技术通讯（英文版） Vol. 21; no. 1; pp. 85 - 89
• Main Author: 姚常飞 Zhou Ming Luo Yunsheng Kou Yanan Li Jiao
• Format: Journal Article
• Language: English
• Published: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute, Nanjing 210016, P.R.China%Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, P.R.China 2015
• Subjects: 倍频; 倒装芯片; 匹配电路设计; 等效电路模型; 肖特基二极管; 肖特基势垒二极管; 调谐; 阻抗匹配; frequency doubler; efficiency; quartz substrate; planar schottky diode
• ISSN: 1006-6748
• DOI: 10.3772/j.issn.1006-6748.2015.01.012

A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumped port to model the nonlinear junction for impedance matching without the need of diode equivalent circuit model. All the matching circuit is designed ＂on-chip＂ and the mul- tiplier is self-biasing. To the doubler, a conversion efficiency of 6.1% and output power of 5.4mW are measured at 214GHz with input power of 88mW, and the typical measured efficiency is 4.5% in 200 - 225 GHz.