利用ICPCVD方法在GaN上沉积氧化硅薄膜的特性
使用感应耦合等离子体化学气相沉积（Inductively coupled plasma chemical vapor deposition,ICPCVD）方法在GaN上沉积SiOx薄膜,生长参数中采用不同RF功率,研究RF功率对薄膜物理性能和电学性能的影响.结果发现,随着RF功率增大,薄膜应力增大,表面粗糙度减小,薄膜致密度增大.选择最优的RF功率参数,制作了SiOx/nGaN金属-绝缘体-半导体（metal-insulator-semiconductor,MIS）器件,结果得到薄膜漏电流密度在外加偏压为90V时小于1×10^-7A/cm^2,SiOx/n-GaN界面态密度为2.4×10^10...
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| Published in | 红外与毫米波学报 Vol. 34; no. 1; pp. 23 - 28 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083
2015
中国科学院研究生院,北京100039%中国科学院上海技术物理研究所传感技术国家重点实验室,上海,200083 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1001-9014 |
| DOI | 10.3724/SP.J.1010.2015.00023 |
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| Abstract | 使用感应耦合等离子体化学气相沉积（Inductively coupled plasma chemical vapor deposition,ICPCVD）方法在GaN上沉积SiOx薄膜,生长参数中采用不同RF功率,研究RF功率对薄膜物理性能和电学性能的影响.结果发现,随着RF功率增大,薄膜应力增大,表面粗糙度减小,薄膜致密度增大.选择最优的RF功率参数,制作了SiOx/nGaN金属-绝缘体-半导体（metal-insulator-semiconductor,MIS）器件,结果得到薄膜漏电流密度在外加偏压为90V时小于1×10^-7A/cm^2,SiOx/n-GaN界面态密度为2.4×10^10eV-1cm-2.表明利用ICPCVD低温沉积的SiOx-GaN界面态密度低,薄膜绝缘性能良好. |
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| AbstractList | TN23; 使用感应耦合等离子体化学气相沉积(Inductively coupled plasma chemical vapor deposition,ICPCVD)方法在GaN上沉积SiOx薄膜,生长参数中采用不同RF功率,研究RF功率对薄膜物理性能和电学性能的影响.结果发现,随着RF功率增大,薄膜应力增大,表面粗糙度减小,薄膜致密度增大.选择最优的RF功率参数,制作了SiOx/n-GaN金属-绝缘体-半导体(metal-insulator-semiconductor,MIS)器件,结果得到薄膜漏电流密度在外加偏压为90V时小于1×10-7 A/cm2,SiOx/n-GaN界面态密度为2.4 × 1010 eV-1cm-2.表明利用ICPCVD低温沉积的SiOx-GaN界面态密度低,薄膜绝缘性能良好. 使用感应耦合等离子体化学气相沉积（Inductively coupled plasma chemical vapor deposition,ICPCVD）方法在GaN上沉积SiOx薄膜,生长参数中采用不同RF功率,研究RF功率对薄膜物理性能和电学性能的影响.结果发现,随着RF功率增大,薄膜应力增大,表面粗糙度减小,薄膜致密度增大.选择最优的RF功率参数,制作了SiOx/nGaN金属-绝缘体-半导体（metal-insulator-semiconductor,MIS）器件,结果得到薄膜漏电流密度在外加偏压为90V时小于1×10^-7A/cm^2,SiOx/n-GaN界面态密度为2.4×10^10eV-1cm-2.表明利用ICPCVD低温沉积的SiOx-GaN界面态密度低,薄膜绝缘性能良好. |
| Author | 刘秀娟 张燕 李向阳 |
| AuthorAffiliation | 中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 中国科学院研究生院,北京100039 |
| AuthorAffiliation_xml | – name: 中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083;中国科学院研究生院,北京100039%中国科学院上海技术物理研究所传感技术国家重点实验室,上海,200083 |
| Author_FL | ZHANG Yan LI Xiang-Yang LIU Xiu-Juan |
| Author_FL_xml | – sequence: 1 fullname: LIU Xiu-Juan – sequence: 2 fullname: ZHANG Yan – sequence: 3 fullname: LI Xiang-Yang |
| Author_xml | – sequence: 1 fullname: 刘秀娟 张燕 李向阳 |
| BookMark | eNotjz1PwlAYhe-AiYj8AycXp9b39vbrjqYqYoiSSFzJ_SpgpNU2hrAxoBHjqB0Mi1Nx0ugi_0dafoY1OJ2c5Ml5cjZQKQgDhdAWBp04hrl71tSPdQxFNQBbOgAYpITKGABrFLC5jqpx3OOAHdOhmLplRBf3b_nTrO41vfP9LJlnX8-L6azGTn6-H7LPSZ6-Zx_p4jHJX2-XyXh5N81fxvlkno3STbTms8tYVf-zglqHBy3vSGuc1ureXkMTFrU0aZvU5dwWvguKC2EpLBkmQhpCEcGxr4RNXMYllcKXlAFIy2bK5D4Hg7qEVNDOanbAAp8FnfZFeBMFhbDdHQy7ff53tDgMVkFur0jRDYPOda9gr6Jen0XDtl04HMNxgfwCzGdnvw |
| ClassificationCodes | TN23 |
| ContentType | Journal Article |
| Copyright | Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
| Copyright_xml | – notice: Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
| DBID | 2RA 92L CQIGP W92 ~WA 2B. 4A8 92I 93N PSX TCJ |
| DOI | 10.3724/SP.J.1010.2015.00023 |
| DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 维普中文期刊数据库 中文科技期刊数据库-工程技术 中文科技期刊数据库- 镜像站点 Wanfang Data Journals - Hong Kong WANFANG Data Centre Wanfang Data Journals 万方数据期刊 - 香港版 China Online Journals (COJ) China Online Journals (COJ) |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Applied Sciences |
| DocumentTitleAlternate | Characterization of silicon oxide film grown on GaN deposited by ICPCVD |
| DocumentTitle_FL | Characterization of silicon oxide film grown on GaN deposited by ICPCVD |
| EndPage | 28 |
| ExternalDocumentID | hwyhmb201501005 663872780 |
| GrantInformation_xml | – fundername: 国家自然科学基金资助项目(61204134)Program of National Natural Science Foundation of People's Republic of China funderid: (Grant.61204134) |
| GroupedDBID | 2B. 2C0 2RA 5VS 92H 92I 92L ACGFS AENEX ALMA_UNASSIGNED_HOLDINGS CQIGP CW9 DU5 GROUPED_DOAJ IPNFZ KQ8 OK1 RIG RNS TCJ TGT U1G U5S W92 ~WA 4A8 5XA 5XJ 93N ABJNI PSX |
| ID | FETCH-LOGICAL-c595-d6498bb6cf80ebcc5e1da13cd2ce3cb1fec638abd9dcfd9a00d56ae4bfb029833 |
| ISSN | 1001-9014 |
| IngestDate | Thu May 29 04:20:08 EDT 2025 Wed Feb 14 10:34:08 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 1 |
| Keywords | ICP-CVD 表面粗糙度 SiOx 界面态密度 film stress 薄膜应力 SiOx films surface roughness interface trap density |
| Language | Chinese |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c595-d6498bb6cf80ebcc5e1da13cd2ce3cb1fec638abd9dcfd9a00d56ae4bfb029833 |
| Notes | ICP-CVD; SiOx films; film stress; surface roughness; interface trap density 31-1577/TN LIU Xiu-Juan, ZHANG Yan, LI Xiang-Yang（1 State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; 2. Graduate University of Chinese Academy of Sciences, Beijing 100039, China） Silicon oxide（ SiOx） films on GaN were synthesized at 75 ℃,using the inductively coupled plasma chemical vapor deposition（ ICPCVD） with different radio-frequency chuck power（ RF power）. The physical and electrical properties of the deposited SiOx thin films were characterized by various methods. It is found that as the RF power increased,the films＇ stress increased while the surface roughness and the film density increased. With optimized RF power,the SiOx/ n-GaN metal-insulator-semiconductor（ MIS） structures were fabricated. The electrical properties of the SiOxfilms were investigated by current density-voltage（ J-V） and capacitance-voltage（ C-V） measurements. The resu |
| PageCount | 6 |
| ParticipantIDs | wanfang_journals_hwyhmb201501005 chongqing_primary_663872780 |
| PublicationCentury | 2000 |
| PublicationDate | 2015 |
| PublicationDateYYYYMMDD | 2015-01-01 |
| PublicationDate_xml | – year: 2015 text: 2015 |
| PublicationDecade | 2010 |
| PublicationTitle | 红外与毫米波学报 |
| PublicationTitleAlternate | Journal of Infrared and Millimeter Waves |
| PublicationTitle_FL | Journal of Infrared and Millimeter Waves |
| PublicationYear | 2015 |
| Publisher | 中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 中国科学院研究生院,北京100039%中国科学院上海技术物理研究所传感技术国家重点实验室,上海,200083 |
| Publisher_xml | – name: 中国科学院研究生院,北京100039%中国科学院上海技术物理研究所传感技术国家重点实验室,上海,200083 – name: 中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 |
| SSID | ssib017479198 ssib038074669 ssj0039469 ssib051375082 ssib007291925 ssib002806809 ssib023167203 ssib008143719 ssib000862495 |
| Score | 2.0626445 |
| Snippet | 使用感应耦合等离子体化学气相沉积（Inductively coupled plasma chemical vapor deposition,ICPCVD）方法在GaN上沉积SiOx薄膜,生长参数中采用不同RF功率,研究RF功率对薄... TN23; 使用感应耦合等离子体化学气相沉积(Inductively coupled plasma chemical vapor deposition,ICPCVD)方法在GaN上沉积SiOx薄膜,生长参数中采用不同RF功率,研究RF功率... |
| SourceID | wanfang chongqing |
| SourceType | Aggregation Database Publisher |
| StartPage | 23 |
| SubjectTerms | ICP-CVD SiOx 界面态密度 薄膜应力 表面粗糙度 |
| Title | 利用ICPCVD方法在GaN上沉积氧化硅薄膜的特性 |
| URI | http://lib.cqvip.com/qk/95821A/201501/663872780.html https://d.wanfangdata.com.cn/periodical/hwyhmb201501005 |
| Volume | 34 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVAFT databaseName: Open Access Digital Library issn: 1001-9014 databaseCode: KQ8 dateStart: 20090101 customDbUrl: isFulltext: true dateEnd: 99991231 titleUrlDefault: http://grweb.coalliance.org/oadl/oadl.html omitProxy: true ssIdentifier: ssj0039469 providerName: Colorado Alliance of Research Libraries |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV29b9QwFI9KWVj4RpQCugGPKYnj5OwxuctRKlEV6UDdTrGT9BauQK9CdGIoiCJG6IC6MF2ZQLDQ_4fe9c_gPcdNTanEh3SKfPZ7zz-_F8fPTvzsOLdooErf8zKX-VS5TMnMzSRXLmclFyFMAHK9fezeYjT_gC0sh8tTp-wIwetDOac2TtxX8j9WhTywK-6S_QfL1kIhA9JgX7iCheH6VzYmaUg4J7EgaZMIRmJ-t7XUetgmaURERBKBiSQgIkRK0QKCO9kiSRlJOOGxLqWEa_YYfh2d42EaJbdQCBb5hIMEjn85wwSPUBpWGuucJgqpquPIbru8WJrEJKYoM2ZaZgUgRXqoNE40jY9QK8CGuE3iSMsE9vDw1jCNFtyghgqRFnI6NkkCrfU0MkBpMQPytq4aFOIR4ZNUoKwksNc_qr2f-l41YAELciQkaZt6kbXGCDKERm2rFkA0DXwEqXWGOtbaMkbzUJco0EMDYgIUWTVaaC522BKte9E5SWANDPCkml1gs7mGyqm2jC4SKRbFMdq2ygGD0NbvsKn2mq0RC7-Jw3fh9pBm1oftrmvGp8DydKpd-cfH0KBJGb7FX5pbwKUdDz9_xHVH75D3l-jk_WfP-48kkgApxhI-TXFhDL-OuG_7-ZE54_zodb4dNw5meL6wBhYOXnzzKM4gxXAN1ucCeEgCi6K6PPQDcHx5HTcuEEyfZVnrptoziy27fVK7MK5Kf3Ww8gS8Rb15b1BmgxXLz-yed86aCWIjrnr7BWdqo3_ROWcmiw0zFK9dcsT-60-Td7tVhx9v742_vd_f2YXu_eP7m_HXrcno8_jLaP_t9uTjy4PtzYNXO5MPm5OtvfGL0WWn20m7rXnXnIPiqlCEbh4xwaWMVMm9QioVFn6e-YHKqSoCJf2yUDCIZjIXuSpzkXnwfI2ygslS4vkKQXDFmR6sDoqrTkOyIIiy0qeU5-CIehkLVc4ElZQWPGuqGWe2VkTvcRXupgdzEg6zHO7NOA2jmp55CK71jtn_2p9JZp0zmK6WMa8708On68UNcOyH8qa-aX4CC-ey7g |
| linkProvider | Colorado Alliance of Research Libraries |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=%E5%88%A9%E7%94%A8ICPCVD%E6%96%B9%E6%B3%95%E5%9C%A8GaN%E4%B8%8A%E6%B2%89%E7%A7%AF%E6%B0%A7%E5%8C%96%E7%A1%85%E8%96%84%E8%86%9C%E7%9A%84%E7%89%B9%E6%80%A7&rft.jtitle=%E7%BA%A2%E5%A4%96%E4%B8%8E%E6%AF%AB%E7%B1%B3%E6%B3%A2%E5%AD%A6%E6%8A%A5&rft.au=%E5%88%98%E7%A7%80%E5%A8%9F&rft.au=%E5%BC%A0%E7%87%95&rft.au=%E6%9D%8E%E5%90%91%E9%98%B3&rft.date=2015&rft.pub=%E4%B8%AD%E5%9B%BD%E7%A7%91%E5%AD%A6%E9%99%A2%E4%B8%8A%E6%B5%B7%E6%8A%80%E6%9C%AF%E7%89%A9%E7%90%86%E7%A0%94%E7%A9%B6%E6%89%80%E4%BC%A0%E6%84%9F%E6%8A%80%E6%9C%AF%E5%9B%BD%E5%AE%B6%E9%87%8D%E7%82%B9%E5%AE%9E%E9%AA%8C%E5%AE%A4%2C%E4%B8%8A%E6%B5%B7200083&rft.issn=1001-9014&rft.volume=34&rft.issue=1&rft.spage=23&rft.epage=28&rft_id=info:doi/10.3724%2FSP.J.1010.2015.00023&rft.externalDocID=hwyhmb201501005 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F95821A%2F95821A.jpg http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fwww.wanfangdata.com.cn%2Fimages%2FPeriodicalImages%2Fhwyhmb%2Fhwyhmb.jpg |