激光剥蚀电感耦合等离子体质谱法分析Cr∶ZnSe晶体中掺杂元素Cr的含量和分布

采用激光剥蚀电感耦合等离子体质谱（LA-ICP-MS）法研究激光晶体材料Cr∶Zn Se晶体中掺杂元素铬（Cr）的含量和分布。利用镀膜扩散掺杂方法,制备不同掺杂浓度的Cr∶Zn Se晶体标准样品作为固体标准物质,实现Cr∶Zn Se晶体中Cr的定量分析。LA-ICP-MS法研究自制标准样品中Cr的分布均匀性,电感耦合等离子体光谱法测定其准确含量。通过激光点剥蚀和线扫描剥蚀采样,获得Cr元素的点位和含量分布信息,实现晶体中Cr的原位微区分析。标准工作曲线相关系数0.9992,检出限0.08 mg/kg。本方法可为不同生长条件下Cr∶Zn Se晶体中Cr的统计分布分析提供有效检测手段。...

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Bibliographic Details
Published in分析化学 Vol. 43; no. 1; pp. 151 - 154
Main Author 朱燕 陈敏 屈海云 周慧 李青 邹慧君 陈奕睿 汪正
Format Journal Article
LanguageChinese
Published 华东理工大学，上海200237%华东理工大学,上海,200237 2015
中国科学院上海硅酸盐研究所,上海,200050%中国科学院上海硅酸盐研究所，上海200050
Subjects
Cr∶Zn
Se晶体
掺杂
激光剥蚀电感耦合等离子体质谱
Chromium_doped Zine selenide crystals
掺杂
激光剥蚀电感耦合等离子体质谱
Laser ablation inductively coupled plasma mass spectrometry
Cr∶ZnSe晶体
Doping
Online AccessGet full text
ISSN0253-3820
DOI10.11895/j.issn.0253_3820.140355

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Summary:采用激光剥蚀电感耦合等离子体质谱（LA-ICP-MS）法研究激光晶体材料Cr∶Zn Se晶体中掺杂元素铬（Cr）的含量和分布。利用镀膜扩散掺杂方法,制备不同掺杂浓度的Cr∶Zn Se晶体标准样品作为固体标准物质,实现Cr∶Zn Se晶体中Cr的定量分析。LA-ICP-MS法研究自制标准样品中Cr的分布均匀性,电感耦合等离子体光谱法测定其准确含量。通过激光点剥蚀和线扫描剥蚀采样,获得Cr元素的点位和含量分布信息,实现晶体中Cr的原位微区分析。标准工作曲线相关系数0.9992,检出限0.08 mg/kg。本方法可为不同生长条件下Cr∶Zn Se晶体中Cr的统计分布分析提供有效检测手段。
Bibliography:ZHU Yan, CHEN Min, QU Hai-Yun, ZHOU Hui, LI Qing, ZOU Hui-Jun, CHEN Yi-Rui ,WANG Zheng（1 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; 2 East China University of Science and Technology, Shanghai 200237, China）
Laser ablation inductively coupled plasma mass spectrometry; Chromium-doped Zinc selenide crystals ; Doping
22-1125/O6
Laser ablation inductively coupled plasma mass spectrometry （LA-ICP-MS） was applied for the determination of doping element chromium（Cr） content and distribution in Cr ：ZnSe crystals. Several different Cr ： ZnSe crystals were prepared by diffusion method as reference material to solve the problem of accurate quantization. The homogeneity of Cr in these samples was characterized by LA-ICP-MS and the concentrations achieved by inductively coupled plasma atomic emission spectrometry （ICP-AES）. With signal pot and line scan sampling, the present method provided effective position and content distribution information of Cr in ZnSe crystals, achieved the in
ISSN:0253-3820
DOI:10.11895/j.issn.0253_3820.140355