基于国产厚型气体电子倍增器的低能电子二维位置探测器
为探测0．1～50MeV低能电子脉冲束流的位置分布，研制基于国产厚型气体电子倍增器（Thick Gaseous Electron Multiplier，THGEM）的二维位置探测器，位置分辨要求好于200gm，灵敏面积为50mm×50mm。THGEM的孔径为150gm、孔间距400pm、厚度100gm。用Geant4模拟了薄膜窗厚度、空气层厚度等对电子透过率和横向扩散的影响。根据模拟结果，优化了探测器的结构和设计。并用能量为5．9keV的X射线源55Fe测试不同工作气体的增益，单层最大增益好于1×10^4，双层最大增益好于6×10^4，能量分辨率好于23％。...
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| Published in | 核技术 Vol. 39; no. 9; pp. 52 - 57 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
中国科学院高能物理研究所 北京100049
2016
核工业二九○研究所 韶关512026 核探测与核电子学国家重点实验室 北京100049%核探测与核电子学国家重点实验室 北京100049 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0253-3219 |
| DOI | 10.11889/j.0253-3219.2016.hjs.39.090402 |
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| Abstract | 为探测0．1～50MeV低能电子脉冲束流的位置分布，研制基于国产厚型气体电子倍增器（Thick Gaseous Electron Multiplier，THGEM）的二维位置探测器，位置分辨要求好于200gm，灵敏面积为50mm×50mm。THGEM的孔径为150gm、孔间距400pm、厚度100gm。用Geant4模拟了薄膜窗厚度、空气层厚度等对电子透过率和横向扩散的影响。根据模拟结果，优化了探测器的结构和设计。并用能量为5．9keV的X射线源55Fe测试不同工作气体的增益，单层最大增益好于1×10^4，双层最大增益好于6×10^4，能量分辨率好于23％。 |
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| AbstractList | TL82; 为探测0.1-50 MeV低能电子脉冲束流的位置分布,研制基于国产厚型气体电子倍增器(Thick GaseousElectron Multiplier,THGEM)的二维位置探测器,位置分辨要求好于200 μn,灵敏面积为50 mm×50 mm.THGEM的孔径为150 μm、孔间距400 μm、厚度100μm.用Geant4模拟了薄膜窗厚度、空气层厚度等对电子透过率和横向扩散的影响.根据模拟结果,优化了探测器的结构和设计.并用能量为5.9 keV的X射线源55Fe测试不同工作气体的增益,单层最大增益好于1×104,双层最大增益好于6×104,能量分辨率好于23％. 为探测0．1～50MeV低能电子脉冲束流的位置分布，研制基于国产厚型气体电子倍增器（Thick Gaseous Electron Multiplier，THGEM）的二维位置探测器，位置分辨要求好于200gm，灵敏面积为50mm×50mm。THGEM的孔径为150gm、孔间距400pm、厚度100gm。用Geant4模拟了薄膜窗厚度、空气层厚度等对电子透过率和横向扩散的影响。根据模拟结果，优化了探测器的结构和设计。并用能量为5．9keV的X射线源55Fe测试不同工作气体的增益，单层最大增益好于1×10^4，双层最大增益好于6×10^4，能量分辨率好于23％。 |
| Author | 颜嘉庆 谢宇广 胡涛 吕军光 周莉 |
| AuthorAffiliation | 核工业二九0研究所,韶关512026 核探测与核电子学国家重点实验室,北京100049 中国科学院高能物理研究所,北京100049 |
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| Author_FL | YAN Jiaqing HU Tao XIE Yuguang LYU Junguang ZHOU Li |
| Author_FL_xml | – sequence: 1 fullname: YAN Jiaqing – sequence: 2 fullname: XIE Yuguang – sequence: 3 fullname: HU Tao – sequence: 4 fullname: LYU Junguang – sequence: 5 fullname: ZHOU Li |
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| Copyright | Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
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| DOI | 10.11889/j.0253-3219.2016.hjs.39.090402 |
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| DocumentTitleAlternate | THGEM-based two dimension position detector for low energy electron |
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| Keywords | 二维位置 低能电子 厚型气体电子倍增器 THGEM 2D position Low energy electron Geant4 |
| Language | Chinese |
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| Notes | Background： The thick gaseous electron multiplier （THGEM） is homemade with the hole diameter of 150 μm, pitch of 400 μm, and thickness of 100μm. Purpose： A THGEM-based 2D position detector is developed for low energy electron detection. Methods： The influences of film＇s thickness, air-layer＇s thickness, etc., on the electron transfer efficiency and transverse diffusion were simulated by Geant4 and using the 5.9-keV X-rays, and the gas gain, energy resolution were measured in different gas mixtures. Results： According to the simulation results, the design and structure of the detector were optimized and the maximum gas gain of single and double layer THGEMs reached 1 × 10^4 and 6×10^4, respectively, and the energy resolution was higher than 23% for both single- and double-layer THGEMs. Conclusion： The spatial resolution is required less than 200μm in 50 mm×50 mm sensitive area. 31-1342/TL YAN Jiaqing1＇2 XIE Yuguang2＇3 HU Tao2＇3 LYU Junguang2＇3 ZHOU Li2＇3 1 （Research Institute No,290 China National Nuclear Corpor |
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| Publisher | 中国科学院高能物理研究所 北京100049 核工业二九○研究所 韶关512026 核探测与核电子学国家重点实验室 北京100049%核探测与核电子学国家重点实验室 北京100049 |
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| Snippet | 为探测0．1～50MeV低能电子脉冲束流的位置分布，研制基于国产厚型气体电子倍增器（Thick Gaseous Electron Multiplier，THGEM）的二维位置探测器，位置分辨要求好... TL82; 为探测0.1-50 MeV低能电子脉冲束流的位置分布,研制基于国产厚型气体电子倍增器(Thick GaseousElectron Multiplier,THGEM)的二维位置探测器,位置分辨要求好于200 μn,... |
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| SubjectTerms | Geant4 二维位置 低能电子 厚型气体电子倍增器 |
| Title | 基于国产厚型气体电子倍增器的低能电子二维位置探测器 |
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