基于多模式扫描探针显微镜技术分析碳化硅的辐照损伤
本文在600℃对6H—SiC进行了He^＋辐照实验，离子辐照能量为100keV，剂量为5×10^15 ions．cm、1×10Mions．cm、3×10Mions．cm^-2和8×10Mions．cm^-2本文采用多模式扫描探针显微镜技术，包括轻敲模式原子力显微镜、纳米压痕／戈0痕和导电模式原子力显微镜技术对样品辐照前后的表面损伤进行了分析。结果表明，随辐照剂量的增加，样品表面粗糙度逐渐增加，表面硬度逐渐下降。导电模式原子力显微镜能清晰地观测到样品表面氦泡分布形态，进一步说明材料表面的肿胀是由材料内部高压氦泡产生的。...
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| Published in | 核技术 Vol. 37; no. 1; pp. 29 - 33 |
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| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
大连民族学院物理与材料工程学院 大连116600
2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0253-3219 |
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| Abstract | 本文在600℃对6H—SiC进行了He^＋辐照实验，离子辐照能量为100keV，剂量为5×10^15 ions．cm、1×10Mions．cm、3×10Mions．cm^-2和8×10Mions．cm^-2本文采用多模式扫描探针显微镜技术，包括轻敲模式原子力显微镜、纳米压痕／戈0痕和导电模式原子力显微镜技术对样品辐照前后的表面损伤进行了分析。结果表明，随辐照剂量的增加，样品表面粗糙度逐渐增加，表面硬度逐渐下降。导电模式原子力显微镜能清晰地观测到样品表面氦泡分布形态，进一步说明材料表面的肿胀是由材料内部高压氦泡产生的。 |
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| AbstractList | TL62+7; 本文在600℃对6H-SiC进行了He+辐照实验,离子辐照能量为100 keV,剂量为5×1015 ions.cm-2、1×1016 ions·cm-2、3×1016 ions.cm-2和8×1016 ions.cm-2.本文采用多模式扫描探针显微镜技术,包括轻敲模式原子力显微镜、纳米压痕/划痕和导电模式原子力显微镜技术对样品辐照前后的表面损伤进行了分析.结果表明,随辐照剂量的增加,样品表面粗糙度逐渐增加,表面硬度逐渐下降.导电模式原子力显微镜能清晰地观测到样品表面氦泡分布形态,进一步说明材料表面的肿胀是由材料内部高压氦泡产生的. 本文在600℃对6H—SiC进行了He^＋辐照实验，离子辐照能量为100keV，剂量为5×10^15 ions．cm、1×10Mions．cm、3×10Mions．cm^-2和8×10Mions．cm^-2本文采用多模式扫描探针显微镜技术，包括轻敲模式原子力显微镜、纳米压痕／戈0痕和导电模式原子力显微镜技术对样品辐照前后的表面损伤进行了分析。结果表明，随辐照剂量的增加，样品表面粗糙度逐渐增加，表面硬度逐渐下降。导电模式原子力显微镜能清晰地观测到样品表面氦泡分布形态，进一步说明材料表面的肿胀是由材料内部高压氦泡产生的。 |
| Author | 白志平 范红玉 袁凯 刘纯洁 安泰岩 王研 赵晨旭 李月 |
| AuthorAffiliation | 大连民族学院物理与材料工程学院,大连116600 |
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| DocumentTitleAlternate | Irradiation damage in silicon carbide based on a multi-mode scanning probe microscope |
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| EndPage | 33 |
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| Keywords | Multi-mode scanning probe microscope Nano-indentation/scratch 辐照损伤 纳米压痕/划痕 碳化硅 多模式扫描探针显微镜 Silicon carbide (SiC) Irradiation damage |
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| Notes | Key Silicon carbide （SIC）, Irradiation damage, Nano-indentation/scratch, Multi-mode scanning probemicroscope 31-1342/TL BAI Zhiping, FAN Hongyu ,YUAN Kai LIU, Chunjie, AN Taiyan ,WANG Yan, ZHAO Chenxu, LI Yue （School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600, China） Background： As one of the most attractive materials for the first wall or structural materials in fusion reactors, silicon carbide （SIC） is subjected to strong heat flux, neutron radiation and the bombardment by energetic ions. However, defects in material will be induced by high temperature and high radiation. Purpose： The analysis of irradiation damage behavior in SiC is important for the development of fusion reactors. Methods： 6H-SiC were irradiated by 100-keV He＋ at 600℃ in doses of 5×10^15 ions＇cm^-2, lxl016 ions.cm-2, 3×10^16 ions＇cm 2 and 8×10^16ions.cm 2. Multi-mode scanning probe microscopy techniques, including tapping mode atomic force microscopy （AFM）, and nano-indentation/scratch and conduction |
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| PublicationTitle | 核技术 |
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| Publisher | 大连民族学院物理与材料工程学院 大连116600 |
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| Snippet | 本文在600℃对6H—SiC进行了He^＋辐照实验，离子辐照能量为100keV，剂量为5×10^15 ions．cm、1×10Mions．cm、3×10Mions．cm^-2和8×10Mions．cm^-2本文采用多模式扫描探针显微... TL62+7; 本文在600℃对6H-SiC进行了He+辐照实验,离子辐照能量为100 keV,剂量为5×1015 ions.cm-2、1×1016 ions·cm-2、3×1016 ions.cm-2和8×1016 ions.cm-2.本文采用多模式扫描... |
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| SubjectTerms | 多模式扫描探针显微镜 碳化硅 纳米压痕戌0痕 辐照损伤 |
| Title | 基于多模式扫描探针显微镜技术分析碳化硅的辐照损伤 |
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