X射线对金硅界面剂量增强效应的模拟研究
本文以光子与物质的相互作用机制为基础，论述了剂量增强效应的基本原理。用蒙特卡罗方法研究了金和硅交界时X射线入射产生的剂量梯度分布，通过MCNP5程序建立了一个三维的金硅界面结构模型，计算了不同厚度的金在金硅界面的剂量增强因子。计算结果表明：当X射线为30-300keV时，界面附近硅一侧存在较大的剂量增强效应。金的厚度影响界面附近的剂量增强效果，当金的厚度为0-10μm时，剂量增强因子随金的厚度增大；当金的厚度超过10μm后，剂量增强因子随金厚度的增加而减少。...
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| Published in | 核技术 Vol. 36; no. 6; pp. 8 - 13 |
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| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
新疆大学物理科学与技术学院 乌鲁木齐830046
2013
新疆电子信息材料与器件重点实验室 乌鲁木齐830011%新疆大学物理科学与技术学院 乌鲁木齐830046 中国科学院新疆理化技术研究所 乌鲁木齐830011 新疆电子信息材料与器件重点实验室 乌鲁木齐830011%中国科学院新疆理化技术研究所 乌鲁木齐830011 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0253-3219 |
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| Summary: | 本文以光子与物质的相互作用机制为基础，论述了剂量增强效应的基本原理。用蒙特卡罗方法研究了金和硅交界时X射线入射产生的剂量梯度分布，通过MCNP5程序建立了一个三维的金硅界面结构模型，计算了不同厚度的金在金硅界面的剂量增强因子。计算结果表明：当X射线为30-300keV时，界面附近硅一侧存在较大的剂量增强效应。金的厚度影响界面附近的剂量增强效果，当金的厚度为0-10μm时，剂量增强因子随金的厚度增大；当金的厚度超过10μm后，剂量增强因子随金厚度的增加而减少。 |
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| Bibliography: | Background： The dose enhancement factor of X-ray was found in 1970s, because of its bad damage to electronic devices. Purpose： This paper is mainly to calculate the dose-enhancement factor at Au/Si interfaces. Methods： The gradient distribution of dose with X-rays has been studied at and near the interface of Au/Si by Monte-Carlo simulation of particle transportation. The mechanism of dose enhancement is discussed based on the principles of interaction of photon with matter. A 3D Au/Si model has been established by MCNP5 program and the dose-enhancement factors of different thicknesses Au/Si interfaces were calculated by Monte Carlo method. Results： The calculated results demonstrate that there exists a stronger dose-enhancement in the Si side near the interface when the energy of X-ray is 30-300 keV. Conclusions： When the thickness of Au is 0-10 μm, dose-enhancement factor of X-ray increases along with the increase of the thickness of Au, when the thickness of Au exceeds 10 μm, dose-enhancement factor of X-r |
| ISSN: | 0253-3219 |