Optimal design of graphene-based plasmonic enhanced photodetector using PSO

In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and red...

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Published inScientific reports Vol. 14; no. 1; pp. 15291 - 24
Main Authors Molaei-Yeznabad, Asghar, Abedi, Kambiz
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 03.07.2024
Nature Publishing Group
Nature Portfolio
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ISSN2045-2322
2045-2322
DOI10.1038/s41598-024-65311-x

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Abstract In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 μ m , and the specific detectivity is 2.566× 10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 pW / Hz .
AbstractList In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3μm, and the specific detectivity is 2.566×107 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 pW/Hz.
In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 $$\mu {\text{m}}$$ μm, and the specific detectivity is 2.566× $${10}^{7}$$ 107 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 $${\text{pW}}/\sqrt{\text{Hz}}$$ pW/Hz.
In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 $$\mu {\text{m}}$$ μ m , and the specific detectivity is 2.566× $${10}^{7}$$ 10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 $${\text{pW}}/\sqrt{\text{Hz}}$$ pW / Hz .
In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal-oxide-semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 , and the specific detectivity is 2.566× Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 .
Abstract In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 $$\mu {\text{m}}$$ μ m , and the specific detectivity is 2.566× $${10}^{7}$$ 10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 $${\text{pW}}/\sqrt{\text{Hz}}$$ pW / Hz .
In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 μ m , and the specific detectivity is 2.566× 10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 pW / Hz .
In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal-oxide-semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 μ m , and the specific detectivity is 2.566× 10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 pW / Hz .In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal-oxide-semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 μ m , and the specific detectivity is 2.566× 10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 pW / Hz .
ArticleNumber 15291
Author Molaei-Yeznabad, Asghar
Abedi, Kambiz
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BackLink https://www.ncbi.nlm.nih.gov/pubmed/38961178$$D View this record in MEDLINE/PubMed
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Issue 1
Keywords Graphene
Photodetector
Particle swarm optimization
CMOS-compatible
Plasmonic
Language English
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Snippet In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with...
Abstract In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with...
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SubjectTerms 639/624
639/925
Algorithms
CMOS-compatible
Fabrication
Graphene
Humanities and Social Sciences
multidisciplinary
Particle swarm optimization
Photodetector
Plasmonic
Production costs
Science
Science (multidisciplinary)
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Title Optimal design of graphene-based plasmonic enhanced photodetector using PSO
URI https://link.springer.com/article/10.1038/s41598-024-65311-x
https://www.ncbi.nlm.nih.gov/pubmed/38961178
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https://www.proquest.com/docview/3075701979
https://pubmed.ncbi.nlm.nih.gov/PMC11222467
https://doi.org/10.1038/s41598-024-65311-x
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