Optimal design of graphene-based plasmonic enhanced photodetector using PSO
In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and red...
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| Published in | Scientific reports Vol. 14; no. 1; pp. 15291 - 24 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
London
Nature Publishing Group UK
03.07.2024
Nature Publishing Group Nature Portfolio |
| Subjects | |
| Online Access | Get full text |
| ISSN | 2045-2322 2045-2322 |
| DOI | 10.1038/s41598-024-65311-x |
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| Abstract | In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3
μ
m
, and the specific detectivity is 2.566×
10
7
Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361
pW
/
Hz
. |
|---|---|
| AbstractList | In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3μm, and the specific detectivity is 2.566×107 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 pW/Hz. In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 $$\mu {\text{m}}$$ μm, and the specific detectivity is 2.566× $${10}^{7}$$ 107 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 $${\text{pW}}/\sqrt{\text{Hz}}$$ pW/Hz. In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 $$\mu {\text{m}}$$ μ m , and the specific detectivity is 2.566× $${10}^{7}$$ 10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 $${\text{pW}}/\sqrt{\text{Hz}}$$ pW / Hz . In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal-oxide-semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 , and the specific detectivity is 2.566× Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 . Abstract In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 $$\mu {\text{m}}$$ μ m , and the specific detectivity is 2.566× $${10}^{7}$$ 10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 $${\text{pW}}/\sqrt{\text{Hz}}$$ pW / Hz . In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 μ m , and the specific detectivity is 2.566× 10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 pW / Hz . In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal-oxide-semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 μ m , and the specific detectivity is 2.566× 10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 pW / Hz .In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal-oxide-semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 μ m , and the specific detectivity is 2.566× 10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 pW / Hz . |
| ArticleNumber | 15291 |
| Author | Molaei-Yeznabad, Asghar Abedi, Kambiz |
| Author_xml | – sequence: 1 givenname: Asghar surname: Molaei-Yeznabad fullname: Molaei-Yeznabad, Asghar organization: Faculty of Electrical Engineering, Shahid Beheshti University – sequence: 2 givenname: Kambiz surname: Abedi fullname: Abedi, Kambiz email: k_abedi@sbu.ac.ir organization: Faculty of Electrical Engineering, Shahid Beheshti University |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/38961178$$D View this record in MEDLINE/PubMed |
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| CitedBy_id | crossref_primary_10_1016_j_optmat_2024_116265 crossref_primary_10_35848_1882_0786_adabb0 crossref_primary_10_1038_s41598_024_79674_8 crossref_primary_10_1016_j_optmat_2025_116922 crossref_primary_10_1007_s00202_024_02723_y crossref_primary_10_1007_s11220_024_00520_2 |
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| Keywords | Graphene Photodetector Particle swarm optimization CMOS-compatible Plasmonic |
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| Snippet | In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with... Abstract In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with... |
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| SourceType | Open Website Open Access Repository Aggregation Database Index Database Enrichment Source Publisher |
| StartPage | 15291 |
| SubjectTerms | 639/624 639/925 Algorithms CMOS-compatible Fabrication Graphene Humanities and Social Sciences multidisciplinary Particle swarm optimization Photodetector Plasmonic Production costs Science Science (multidisciplinary) |
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| Title | Optimal design of graphene-based plasmonic enhanced photodetector using PSO |
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