Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer

Bilayer structures composed of 5% Mg-doped LiNbO 3 single-crystal films and ultrathin Al 2 O 3 layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement results rev...

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Published in	Nanoscale research letters Vol. 14; no. 1; pp. 131 - 8
Main Authors	Zhang, Yan, Ren, Qing Hua, Chai, Xiao Jie, Jiang, Jun, Yang, Jian Guo, Jiang, An Quan
Format	Journal Article
Language	English
Published	New York Springer US 16.04.2019 Springer Nature B.V SpringerOpen
Subjects	Aluminum oxide Applications of Atomic Layer Deposition Atomic layer deposition Atomic layer epitaxy Charge injection Chemistry and Materials Science Crystal structure Electric fields Electric potential Electrodes Ferroelectric materials Ferroelectric memory Ferroelectricity Hysteresis loops Ion slicing Lithium niobates Magnesium Materials Science Memory devices Mg-doped LiNbO3 Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Scanning electron microscopy Single crystals Slicing Switching Thickness Thin films Tunnel switch Voltage Mg-doped LiNbO Ferroelectric memory Atomic layer deposition Ion slicing Tunnel switch
Online Access	Get full text
ISSN	1931-7573 1556-276X
DOI	10.1186/s11671-019-2970-6

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Abstract	Bilayer structures composed of 5% Mg-doped LiNbO 3 single-crystal films and ultrathin Al 2 O 3 layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement results reveal that the P-V hysteresis loops are symmetry in type II mode with single voltage pulse per cycle, which may be attributed to the built-in electric field formed by asymmetric electrodes and compensation of an internal imprint field. Besides, the inlaid Al 2 O 3 , as an ideal tunnel switch layer, turns on during ferroelectric switching, but closes during the post-switching or non-switching under the applied pulse voltage. The Al 2 O 3 layer blocks the adverse effects such as by-electrode charge injection and improves the fatigue endurance properties of Mg-doped LiNbO 3 ferroelectric capacitors. This study provides a possible way to improve the reliability properties of ferroelectric devices in the non-volatile memory application.
AbstractList	Bilayer structures composed of 5% Mg-doped LiNbO 3 single-crystal films and ultrathin Al 2 O 3 layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement results reveal that the P-V hysteresis loops are symmetry in type II mode with single voltage pulse per cycle, which may be attributed to the built-in electric field formed by asymmetric electrodes and compensation of an internal imprint field. Besides, the inlaid Al 2 O 3 , as an ideal tunnel switch layer, turns on during ferroelectric switching, but closes during the post-switching or non-switching under the applied pulse voltage. The Al 2 O 3 layer blocks the adverse effects such as by-electrode charge injection and improves the fatigue endurance properties of Mg-doped LiNbO 3 ferroelectric capacitors. This study provides a possible way to improve the reliability properties of ferroelectric devices in the non-volatile memory application. Abstract Bilayer structures composed of 5% Mg-doped LiNbO3 single-crystal films and ultrathin Al2O3 layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement results reveal that the P-V hysteresis loops are symmetry in type II mode with single voltage pulse per cycle, which may be attributed to the built-in electric field formed by asymmetric electrodes and compensation of an internal imprint field. Besides, the inlaid Al2O3, as an ideal tunnel switch layer, turns on during ferroelectric switching, but closes during the post-switching or non-switching under the applied pulse voltage. The Al2O3 layer blocks the adverse effects such as by-electrode charge injection and improves the fatigue endurance properties of Mg-doped LiNbO3 ferroelectric capacitors. This study provides a possible way to improve the reliability properties of ferroelectric devices in the non-volatile memory application. Bilayer structures composed of 5% Mg-doped LiNbO3 single-crystal films and ultrathin Al2O3 layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement results reveal that the P-V hysteresis loops are symmetry in type II mode with single voltage pulse per cycle, which may be attributed to the built-in electric field formed by asymmetric electrodes and compensation of an internal imprint field. Besides, the inlaid Al2O3, as an ideal tunnel switch layer, turns on during ferroelectric switching, but closes during the post-switching or non-switching under the applied pulse voltage. The Al2O3 layer blocks the adverse effects such as by-electrode charge injection and improves the fatigue endurance properties of Mg-doped LiNbO3 ferroelectric capacitors. This study provides a possible way to improve the reliability properties of ferroelectric devices in the non-volatile memory application.Bilayer structures composed of 5% Mg-doped LiNbO3 single-crystal films and ultrathin Al2O3 layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement results reveal that the P-V hysteresis loops are symmetry in type II mode with single voltage pulse per cycle, which may be attributed to the built-in electric field formed by asymmetric electrodes and compensation of an internal imprint field. Besides, the inlaid Al2O3, as an ideal tunnel switch layer, turns on during ferroelectric switching, but closes during the post-switching or non-switching under the applied pulse voltage. The Al2O3 layer blocks the adverse effects such as by-electrode charge injection and improves the fatigue endurance properties of Mg-doped LiNbO3 ferroelectric capacitors. This study provides a possible way to improve the reliability properties of ferroelectric devices in the non-volatile memory application. Bilayer structures composed of 5% Mg-doped LiNbO3 single-crystal films and ultrathin Al2O3 layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement results reveal that the P-V hysteresis loops are symmetry in type II mode with single voltage pulse per cycle, which may be attributed to the built-in electric field formed by asymmetric electrodes and compensation of an internal imprint field. Besides, the inlaid Al2O3, as an ideal tunnel switch layer, turns on during ferroelectric switching, but closes during the post-switching or non-switching under the applied pulse voltage. The Al2O3 layer blocks the adverse effects such as by-electrode charge injection and improves the fatigue endurance properties of Mg-doped LiNbO3 ferroelectric capacitors. This study provides a possible way to improve the reliability properties of ferroelectric devices in the non-volatile memory application.
ArticleNumber	131
Author	Jiang, An Quan Ren, Qing Hua Zhang, Yan Yang, Jian Guo Chai, Xiao Jie Jiang, Jun
Author_xml	– sequence: 1 givenname: Yan surname: Zhang fullname: Zhang, Yan organization: State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University – sequence: 2 givenname: Qing Hua surname: Ren fullname: Ren, Qing Hua email: qhren@mail.sim.ac.cn organization: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences – sequence: 3 givenname: Xiao Jie surname: Chai fullname: Chai, Xiao Jie organization: State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University – sequence: 4 givenname: Jun surname: Jiang fullname: Jiang, Jun organization: State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University – sequence: 5 givenname: Jian Guo surname: Yang fullname: Yang, Jian Guo organization: State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University – sequence: 6 givenname: An Quan surname: Jiang fullname: Jiang, An Quan email: aqjiang@fudan.edu.cn organization: State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University
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CitedBy_id	crossref_primary_10_3390_nano14040345 crossref_primary_10_1002_advs_202300792 crossref_primary_10_1016_j_apsusc_2020_148737
Cites_doi	10.1063/1.3647577 10.1063/1.4934186 10.1021/acsami.7b12170 10.1021/acsnano.7b01199 10.1088/0957-4484/27/16/165705 10.1063/1.5050490 10.1063/1.4978857 10.1002/lpor.201100035 10.1016/S0022-0248(99)00794-0 10.1063/1.2772755 10.1364/OME.5.002634 10.1063/1.1318721 10.1063/1.1526916 10.1002/adfm.201101521 10.1002/adma.200802924 10.1038/s41598-017-09703-2 10.1063/1.4914483 10.1049/el:19990320 10.1063/1.121801 10.1117/12.922401 10.1109/TUFFC.2012.2384 10.1038/s41565-018-0204-1 10.1063/1.3021293 10.1143/JJAP.41.L49 10.1038/s41586-018-0551-y 10.1063/1.3647777 10.1063/1.3435484 10.1364/OE.22.030924 10.1038/nmat5028
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Keywords	Mg-doped LiNbO Ferroelectric memory Atomic layer deposition Ion slicing Tunnel switch
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Snippet	Bilayer structures composed of 5% Mg-doped LiNbO 3 single-crystal films and ultrathin Al 2 O 3 layers with thickness ranging from 2 to 6 nm have been... Bilayer structures composed of 5% Mg-doped LiNbO3 single-crystal films and ultrathin Al2O3 layers with thickness ranging from 2 to 6 nm have been fabricated by... Abstract Bilayer structures composed of 5% Mg-doped LiNbO3 single-crystal films and ultrathin Al2O3 layers with thickness ranging from 2 to 6 nm have been...
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SubjectTerms	Aluminum oxide Applications of Atomic Layer Deposition Atomic layer deposition Atomic layer epitaxy Charge injection Chemistry and Materials Science Crystal structure Electric fields Electric potential Electrodes Ferroelectric materials Ferroelectric memory Ferroelectricity Hysteresis loops Ion slicing Lithium niobates Magnesium Materials Science Memory devices Mg-doped LiNbO3 Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Scanning electron microscopy Single crystals Slicing Switching Thickness Thin films Tunnel switch Voltage
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Title	Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer
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