APA (7th ed.) Citation

Zhang, Y., Ren, Q. H., Chai, X. J., Jiang, J., Yang, J. G., & Jiang, A. Q. (2019). Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer. Nanoscale research letters, 14(1), 131-8. https://doi.org/10.1186/s11671-019-2970-6

Chicago Style (17th ed.) Citation

Zhang, Yan, Qing Hua Ren, Xiao Jie Chai, Jun Jiang, Jian Guo Yang, and An Quan Jiang. "Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer." Nanoscale Research Letters 14, no. 1 (2019): 131-8. https://doi.org/10.1186/s11671-019-2970-6.

MLA (9th ed.) Citation

Zhang, Yan, et al. "Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer." Nanoscale Research Letters, vol. 14, no. 1, 2019, pp. 131-8, https://doi.org/10.1186/s11671-019-2970-6.