Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
Structural defects are detrimental to the efficiency and quality of optoelectronic semiconductor devices. In this work, we study InGaN platelets with a quantum well structure intended for nano-LEDs emitting red light and how their optical properties, measured with cathodoluminescence, relate to the...
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| Published in | Applied physics letters Vol. 123; no. 2 |
|---|---|
| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Melville
American Institute of Physics
10.07.2023
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0003-6951 1077-3118 1077-3118 |
| DOI | 10.1063/5.0150863 |
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| Abstract | Structural defects are detrimental to the efficiency and quality of optoelectronic semiconductor devices. In this work, we study InGaN platelets with a quantum well structure intended for nano-LEDs emitting red light and how their optical properties, measured with cathodoluminescence, relate to the corresponding atomic structure. Through a method of spectroscopy–thinning–imaging, we demonstrate in plan-view how stacking mismatch boundaries intersect the quantum well in a pattern correlated with the observed diminished cathodoluminescence intensity. The results highlight the importance of avoiding stacking mismatch in small LED structures due to the relatively large region of non-radiative recombination caused by the mismatch boundaries. |
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| AbstractList | Structural defects are detrimental to the efficiency and quality of optoelectronic semiconductor devices. In this work, we study InGaN platelets with a quantum well structure intended for nano-LEDs emitting red light and how their optical properties, measured with cathodoluminescence, relate to the corresponding atomic structure. Through a method of spectroscopy-thinning-imaging, we demonstrate in plan-view how stacking mismatch boundaries intersect the quantum well in a pattern correlated with the observed diminished cathodoluminescence intensity. The results highlight the importance of avoiding stacking mismatch in small LED structures due to the relatively large region of non-radiative recombination caused by the mismatch boundaries. |
| Author | Samuelson, Lars Persson, Axel R. Persson, Per O. Å. Gustafsson, Anders Bi, Zhaoxia Darakchieva, Vanya |
| Author_xml | – sequence: 1 givenname: Axel R. surname: Persson fullname: Persson, Axel R. organization: 5Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China – sequence: 2 givenname: Anders surname: Gustafsson fullname: Gustafsson, Anders organization: Solid State Physics and NanoLund, Lund University – sequence: 3 givenname: Zhaoxia surname: Bi fullname: Bi, Zhaoxia organization: 5Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China – sequence: 4 givenname: Lars surname: Samuelson fullname: Samuelson, Lars organization: 5Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China – sequence: 5 givenname: Vanya surname: Darakchieva fullname: Darakchieva, Vanya organization: 5Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China – sequence: 6 givenname: Per O. Å. surname: Persson fullname: Persson, Per O. Å. organization: Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University |
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| Snippet | Structural defects are detrimental to the efficiency and quality of optoelectronic semiconductor devices. In this work, we study InGaN platelets with a quantum... |
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| SubjectTerms | Applied physics Atomic structure Boundaries Cathodoluminescence Condensed Matter Physics (including Material Physics, Nano Physics) Den kondenserade materiens fysik (Här ingår: Materialfysik, nanofysik) Fysik Indium gallium nitrides Light emitting diodes Natural Sciences Naturvetenskap Optical properties Optoelectronic devices Physical Sciences Quantum wells Radiative recombination Scanning transmission electron microscopy Semiconductor devices Stacking |
| Title | Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs |
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