Depletion-All-Around Operation of the SOI Four-Gate Transistor - Akarvardar, Kerem; Cristoloveanu, Sorin; Gentil, Pierre; Schrimpf, Ronald D.; Blalock, Benjamin J. (IEEE transactions on electron devices, 2007)
Keywords: Analog; Analytical models; Applied sciences; Channels; Depletion; Devices; Early voltage; Electronics; Engineering Sciences; Exact sciences and technology; Gates; JFET; JFETs; Logic gates; low-frequency noise; Micro and nanotechnologies; Microelectronics; multiple-gate transistor; Oxides; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sensitivity; Silicon; Silicon-on-insulator; silicon-on-insulator (SOI); Solid modeling; subthreshold swing; Three-dimensional displays; total-dose radiation-hardness; Transconductance; transconductance-to-current ratio; Transistors; Performance evaluation; subthreshold swing; Noise reduction; Junction field effect transistor; Transistor gate; JFET; Experimental device; 1/f noise; Modeling; Silicon on insulator technology; Radiation resistance; Ionizing radiation; Transconductance; Early voltage; Low noise circuit; transconductance-to-current ratio; Multiple gate transistor; total-dose radiation-hardness; Majority carrier; silicon-on-insulator (SOI); low-frequency noise; Radiation dose; Total radiation; Gate oxide; Analog; multiple-gate transistor