Mottness at finite doping and charge instabilities in cuprates

The influence of Mott physics on the doping–temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale...

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Published inNature physics Vol. 13; no. 8; pp. 806 - 811
Main Authors Peli, S., Conte, S. Dal, Comin, R., Nembrini, N., Ronchi, A., Abrami, P., Banfi, F., Ferrini, G., Brida, D., Lupi, S., Fabrizio, M., Damascelli, A., Capone, M., Cerullo, G., Giannetti, C.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 01.08.2017
Nature Publishing Group
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ISSN1745-2473
1745-2481
DOI10.1038/nphys4112

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Summary:The influence of Mott physics on the doping–temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2 p → Cu-3 d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping p cr ≈ 0.16 irrespective of the temperature, and it can be well described by dynamical mean-field theory calculations. We argue that the onset of low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p < p cr region of the phase diagram. This discovery sets a new framework for theories of charge order and low-temperature phases in underdoped copper oxides. The electron dynamics of single-layer Bi 2 Sr 2− x La x CuO 6+ δ is studied as a function of doping, revealing the evolution of charge-transfer excitations from incoherent and localized (as in a Mott insulator) to coherent and delocalized (as in a conventional metal).
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Present address: Dept. of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139-4307 (US)
ISSN:1745-2473
1745-2481
DOI:10.1038/nphys4112