Mottness at finite doping and charge instabilities in cuprates

The influence of Mott physics on the doping–temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale...

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Published inNature physics Vol. 13; no. 8; pp. 806 - 811
Main Authors Peli, S., Conte, S. Dal, Comin, R., Nembrini, N., Ronchi, A., Abrami, P., Banfi, F., Ferrini, G., Brida, D., Lupi, S., Fabrizio, M., Damascelli, A., Capone, M., Cerullo, G., Giannetti, C.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 01.08.2017
Nature Publishing Group
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ISSN1745-2473
1745-2481
DOI10.1038/nphys4112

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Abstract The influence of Mott physics on the doping–temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2 p → Cu-3 d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping p cr ≈ 0.16 irrespective of the temperature, and it can be well described by dynamical mean-field theory calculations. We argue that the onset of low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p < p cr region of the phase diagram. This discovery sets a new framework for theories of charge order and low-temperature phases in underdoped copper oxides. The electron dynamics of single-layer Bi 2 Sr 2− x La x CuO 6+ δ is studied as a function of doping, revealing the evolution of charge-transfer excitations from incoherent and localized (as in a Mott insulator) to coherent and delocalized (as in a conventional metal).
AbstractList The influence of the Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is subject of intense theoretical and experimental effort. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2p→Cu-3d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping pcr ≈0.16 irrespective of the temperature, and it can be well described by dynamical mean field theory calculations. We argue that the onset of the low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p < pcr region of the phase diagram. This discovery sets a new framework for theories of charge order and low-temperature phases in underdoped copper oxides.The influence of the Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is subject of intense theoretical and experimental effort. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2p→Cu-3d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping pcr ≈0.16 irrespective of the temperature, and it can be well described by dynamical mean field theory calculations. We argue that the onset of the low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p < pcr region of the phase diagram. This discovery sets a new framework for theories of charge order and low-temperature phases in underdoped copper oxides.
The influence of Mott physics on the doping–temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2 p → Cu-3 d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping p cr ≈ 0.16 irrespective of the temperature, and it can be well described by dynamical mean-field theory calculations. We argue that the onset of low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p < p cr region of the phase diagram. This discovery sets a new framework for theories of charge order and low-temperature phases in underdoped copper oxides. The electron dynamics of single-layer Bi 2 Sr 2− x La x CuO 6+ δ is studied as a function of doping, revealing the evolution of charge-transfer excitations from incoherent and localized (as in a Mott insulator) to coherent and delocalized (as in a conventional metal).
The influence of the Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is subject of intense theoretical and experimental effort. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2 p →Cu-3 d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping p cr ≈0.16 irrespective of the temperature, and it can be well described by dynamical mean field theory calculations. We argue that the onset of the low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p < p cr region of the phase diagram. This discovery sets a new framework for theories of charge order and low-temperature phases in underdoped copper oxides.
The influence of Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and experimental efforts. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2p -> Cu-3d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping pcr [ap] 0.16 irrespective of the temperature, and it can be well described by dynamical mean-field theory calculations. We argue that the onset of low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p < pcr region of the phase diagram. This discovery sets a new framework for theories of charge order and low-temperature phases in underdoped copper oxides.
The influence of the Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is subject of intense theoretical and experimental effort. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2 →Cu-3 charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping ≈0.16 irrespective of the temperature, and it can be well described by dynamical mean field theory calculations. We argue that the onset of the low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the < region of the phase diagram. This discovery sets a new framework for theories of charge order and low-temperature phases in underdoped copper oxides.
Author Banfi, F.
Ferrini, G.
Conte, S. Dal
Ronchi, A.
Damascelli, A.
Abrami, P.
Nembrini, N.
Giannetti, C.
Cerullo, G.
Comin, R.
Fabrizio, M.
Peli, S.
Brida, D.
Lupi, S.
Capone, M.
AuthorAffiliation 1 Department of Mathematics and Physics, Università Cattolica del Sacro Cuore, Brescia I-25121, Italy
7 Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee, Leuven, Belgium
10 Scuola Internazionale Superiore di Studi Avanzati (SISSA) and CNR-IOM Democritos National Simulation Center, Via Bonomea 265, 34136 Trieste (Italy)
3 IFN-CNR, Dipartimento di Fisica, Politecnico di Milano, 20133 Milano, Italy
8 Department of Physics and Center for Applied Photonics, University of Konstanz, 78457 Konstanz, Germany
9 CNR-IOM Dipartimento di Fisica, Università di Roma La Sapienza P.le Aldo Moro 2, 00185 Rome, Italy
2 Department of Physics, Università degli Studi di Milano, 20133 Milano, Italy
6 I-LAMP (Interdisciplinary Laboratories for Advanced Materials Physics), Università Cattolica del Sacro Cuore, Brescia I-25121, Italy
4 Quantum Matter Institute, University of British Columbia, Vancouver, BC V6T 1Z4, Canada
5 Department of Physics and Astronomy, University of British C
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Snippet The influence of Mott physics on the doping–temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and...
The influence of the Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is subject of intense theoretical and...
The influence of Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is the subject of intense theoretical and...
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SubjectTerms 132/122
140/125
639/301/1034/1038
639/301/119/2795
639/624/1020/1095
639/766/119/1003
639/766/119/995
Atomic
Charge transfer
Classical and Continuum Physics
Complex Systems
Condensed Matter Physics
Copper
Copper oxides
Cuprates
Degrees of freedom
Doping
Electrons
Low temperature
Mathematical and Computational Physics
Mean field theory
Molecular
Optical and Plasma Physics
Physics
Temperature effects
Theoretical
Title Mottness at finite doping and charge instabilities in cuprates
URI https://link.springer.com/article/10.1038/nphys4112
https://www.ncbi.nlm.nih.gov/pubmed/28781605
https://www.proquest.com/docview/1925189190
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https://pubmed.ncbi.nlm.nih.gov/PMC5540185
Volume 13
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