High-throughput fabrication of infinitely long 10 nm slit arrays for terahertz applications
In pursuit of higher field enhancement and applications in terahertz frequency regime, many techniques have been developed and reported for fabrication of high-aspect-ratio metallic nanostructures. While techniques utilizing spacer deposition has successfully overcome the size limit of conventional...
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Published in | Journal of infrared, millimeter and terahertz waves Vol. 36; no. 3; pp. 262 - 268 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Boston
Springer US
01.03.2015
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
ISSN | 1866-6892 1866-6906 |
DOI | 10.1007/s10762-014-0135-3 |
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Abstract | In pursuit of higher field enhancement and applications in terahertz frequency regime, many techniques have been developed and reported for fabrication of high-aspect-ratio metallic nanostructures. While techniques utilizing spacer deposition has successfully overcome the size limit of conventional fabrication tools, they suffer from low throughput or vulnerability to mechanical and chemical treatment, limiting their further application to various fields. In this Letter we report a high-throughput scheme for fabricating metallic gap structures, free from all the aforementioned shortcomings. Vertically aligned gaps are first defined with photolithography and atomic layer deposition, and then made suitable for transmission measurements by etching out predefined sacrificial layers. Existence of the sacrificial layers alleviates many requirements associated with fabrication steps, thereby increasing the overall reliability of the whole process. Using this method we fabricate arrays of 10 nm wide metallic slits whose length is only limited by the substrate size, here 1 cm, and then characterize the sample with terahertz time domain spectroscopy. The sample show steady performance of up to 2500-fold field enhancement even after sonication under various solvents. |
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AbstractList | In pursuit of higher field enhancement and applications in terahertz frequency regime, many techniques have been developed and reported for fabrication of high-aspect-ratio metallic nanostructures. While techniques utilizing spacer deposition has successfully overcome the size limit of conventional fabrication tools, they suffer from low throughput or vulnerability to mechanical and chemical treatment, limiting their further application to various fields. In this Letter we report a high-throughput scheme for fabricating metallic gap structures, free from all the aforementioned shortcomings. Vertically aligned gaps are first defined with photolithography and atomic layer deposition, and then made suitable for transmission measurements by etching out predefined sacrificial layers. Existence of the sacrificial layers alleviates many requirements associated with fabrication steps, thereby increasing the overall reliability of the whole process. Using this method we fabricate arrays of 10 nm wide metallic slits whose length is only limited by the substrate size, here 1 cm, and then characterize the sample with terahertz time domain spectroscopy. The sample show steady performance of up to 2500-fold field enhancement even after sonication under various solvents. |
Author | Kim, Dai-Sik Rhie, Jiyeah Jeong, Jeeyoon Jeon, Woojin Hwang, Cheol Seong |
Author_xml | – sequence: 1 givenname: Jeeyoon surname: Jeong fullname: Jeong, Jeeyoon organization: Department of Physics and Astronomy, Center for Subwavelength Optics, Seoul National University – sequence: 2 givenname: Jiyeah surname: Rhie fullname: Rhie, Jiyeah organization: Department of Physics and Astronomy, Center for Subwavelength Optics, Seoul National University – sequence: 3 givenname: Woojin surname: Jeon fullname: Jeon, Woojin organization: Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University – sequence: 4 givenname: Cheol Seong surname: Hwang fullname: Hwang, Cheol Seong organization: Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University – sequence: 5 givenname: Dai-Sik surname: Kim fullname: Kim, Dai-Sik email: dsk@phya.snu.ac.kr organization: Department of Physics and Astronomy, Center for Subwavelength Optics, Seoul National University |
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Cites_doi | 10.1038/nphoton.2009.22 10.1103/PhysRevB.1.3264 10.1063/1.3672045 10.1021/nl400374z 10.1021/nl1012085 10.1364/AO.22.001099 10.1038/ncomms3361 10.1038/ncomms4933 10.1103/PhysRevLett.102.093906 10.1063/1.3437091 10.1109/JMEMS.2003.820936 10.1063/1.3617476 10.1063/1.4826272 |
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Keywords | Fabrication Terahertz spectroscopy Terahertz nanotechnology Field enhancement Nano-slit |
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SubjectTerms | Arrays Atomic layer epitaxy Chemical treatment Classical Electrodynamics Constraining Deposition Electrical Engineering Electronics and Microelectronics Engineering High aspect ratio Infrared Instrumentation Organic chemistry Photolithography Slits Solvents Substrates Terahertz frequencies Vulnerability |
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Title | High-throughput fabrication of infinitely long 10 nm slit arrays for terahertz applications |
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