Geometric modeling of homoepitaxial CVD diamond growth: I. The {1 0 0}{1 1 1}{1 1 0}{1 1 3} system - Silva, F.; Bonnin, X.; Achard, J.; Brinza, O.; Michau, A.; Gicquel, A. (Journal of crystal growth, 2008)
Keywords: A1. Crystal morphology; A1. Growth models; A2. Single crystal growth; A3. Chemical vapor deposition processes; B1. Diamond; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Engineering Sciences; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Specific materials; Theory and models of film growth; A1. Growth models; A3. Chemical vapor deposition processes; B1. Diamond; A1. Crystal morphology; A2. Single crystal growth; Crystal growth; Homoepitaxy; Cubic lattices; Growth rate; Industrial application; Synthetic diamond; Epitaxy; Geometrical model; Optimization; Transients; Thin films; Time dependence; Crystallites; PECVD; Crystal morphology; Epitaxial layers; Theoretical study; Twinning; Topology; Film growth; CVD; Monocrystals; Quality control; Growth mechanism; Surface area