APA (7th ed.) Citation

Lin, K., Chen, P., Chuu, C., & Chen, Y. (2024). Effects of insertion of an h-AlN monolayer spacer in Pt-WSe2-Pt field-effect transistors. Scientific reports, 14(1), 24019-12. https://doi.org/10.1038/s41598-024-74691-z

Chicago Style (17th ed.) Citation

Lin, Ken-Ming, Po-Jiun Chen, Chih-Piao Chuu, and Yu-Chang Chen. "Effects of Insertion of an H-AlN Monolayer Spacer in Pt-WSe2-Pt Field-effect Transistors." Scientific Reports 14, no. 1 (2024): 24019-12. https://doi.org/10.1038/s41598-024-74691-z.

MLA (9th ed.) Citation

Lin, Ken-Ming, et al. "Effects of Insertion of an H-AlN Monolayer Spacer in Pt-WSe2-Pt Field-effect Transistors." Scientific Reports, vol. 14, no. 1, 2024, pp. 24019-12, https://doi.org/10.1038/s41598-024-74691-z.