Beckers, A., Jazaeri, F., & Enz, C. (2018). Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K. IEEE journal of the Electron Devices Society, 6, 1007-1018. https://doi.org/10.1109/JEDS.2018.2817458
Chicago Style (17th ed.) CitationBeckers, Arnout, Farzan Jazaeri, and Christian Enz. "Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K." IEEE Journal of the Electron Devices Society 6 (2018): 1007-1018. https://doi.org/10.1109/JEDS.2018.2817458.
MLA (9th ed.) CitationBeckers, Arnout, et al. "Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K." IEEE Journal of the Electron Devices Society, vol. 6, 2018, pp. 1007-1018, https://doi.org/10.1109/JEDS.2018.2817458.
Warning: These citations may not always be 100% accurate.