High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C‐SiC/Diamond Junctions for Practical Device Processes - Kagawa, Ryo; Cheng, Zhe; Kawamura, Keisuke; Ohno, Yutaka; Moriyama, Chiharu; Sakaida, Yoshiki; Ouchi, Sumito; Uratani, Hiroki; Inoue, Koji; Nagai, Yasuyoshi; Shigekawa, Naoteru; Liang, Jianbo (Small, 2024)
Keywords: Aluminum gallium nitrides; Annealing; bonding first; Cooling; Crystal growth; Diamonds; Electronic systems; Gallium nitrides; GaN high electron mobility transistors (HEMTs) on the diamond; heat dissipation; Heat transfer; High electron mobility transistors; high thermal stability; large area diamond bonding; low thermal resistance; Mass production; Semiconductor devices; Silicon carbide; Silicon substrates; Thermal conductivity; Thermal management; Thermal resistance; Thermal stability; large area diamond bonding; GaN high electron mobility transistors (HEMTs) on the diamond; low thermal resistance; bonding first; heat dissipation; thermal management; high thermal stability