APA (7th ed.) Citation

Li, Q., Zhang, J., Li, W., Yuan, J., Chen, Y., & Oates, A. (2001). RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology. IEEE transactions on microwave theory and techniques, 49(9), 1546-1551. https://doi.org/10.1109/22.942565

Chicago Style (17th ed.) Citation

Li, Qiang, Jinlong Zhang, Wei Li, J.S Yuan, Yuan Chen, and A.S Oates. "RF Circuit Performance Degradation Due to Soft Breakdown and Hot-carrier Effect in Deep-submicrometer CMOS Technology." IEEE Transactions on Microwave Theory and Techniques 49, no. 9 (2001): 1546-1551. https://doi.org/10.1109/22.942565.

MLA (9th ed.) Citation

Li, Qiang, et al. "RF Circuit Performance Degradation Due to Soft Breakdown and Hot-carrier Effect in Deep-submicrometer CMOS Technology." IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 9, 2001, pp. 1546-1551, https://doi.org/10.1109/22.942565.