Efficient, stable silicon tandem cells enabled by anion-engineered wide-bandgap perovskites
The bandgap of the perovskite top layer in tandem silicon solar cells must be tuned to ∼1.7 electron volts. Usually, the cation composition is varied because the bromine-rich anion compositions with wide bandgaps are structurally unstable. Kim et al. show that by using phenethylammonium as a two-dim...
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| Published in | Science (American Association for the Advancement of Science) Vol. 368; no. 6487; pp. 155 - 160 |
|---|---|
| Main Authors | , , , , , , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
The American Association for the Advancement of Science
10.04.2020
American Association for the Advancement of Science (AAAS) |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0036-8075 1095-9203 1095-9203 |
| DOI | 10.1126/science.aba3433 |
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| Abstract | The bandgap of the perovskite top layer in tandem silicon solar cells must be tuned to ∼1.7 electron volts. Usually, the cation composition is varied because the bromine-rich anion compositions with wide bandgaps are structurally unstable. Kim
et al.
show that by using phenethylammonium as a two-dimensional additive, along with iodine and thiocyanate, bromine-rich perovskite films can be stabilized. A tandem silicon cell delivered >26% certified power conversion efficiency, and a perovskite device maintained 80% of its initial power conversion efficiency of >20% after 1000 hours under illumination.
Science
, this issue p.
155
Thiocyanate as a two-dimensional additive enhanced perovskite carrier mobility and stability in silicon tandem solar cells.
Maximizing the power conversion efficiency (PCE) of perovskite/silicon tandem solar cells that can exceed the Shockley-Queisser single-cell limit requires a high-performing, stable perovskite top cell with a wide bandgap. We developed a stable perovskite solar cell with a bandgap of ~1.7 electron volts that retained more than 80% of its initial PCE of 20.7% after 1000 hours of continuous illumination. Anion engineering of phenethylammonium-based two-dimensional (2D) additives was critical for controlling the structural and electrical properties of the 2D passivation layers based on a lead iodide framework. The high PCE of 26.7% of a monolithic two-terminal wide-bandgap perovskite/silicon tandem solar cell was made possible by the ideal combination of spectral responses of the top and bottom cells. |
|---|---|
| AbstractList | The bandgap of the perovskite top layer in tandem silicon solar cells must be tuned to ∼1.7 electron volts. Usually, the cation composition is varied because the bromine-rich anion compositions with wide bandgaps are structurally unstable. Kim
et al.
show that by using phenethylammonium as a two-dimensional additive, along with iodine and thiocyanate, bromine-rich perovskite films can be stabilized. A tandem silicon cell delivered >26% certified power conversion efficiency, and a perovskite device maintained 80% of its initial power conversion efficiency of >20% after 1000 hours under illumination.
Science
, this issue p.
155
Thiocyanate as a two-dimensional additive enhanced perovskite carrier mobility and stability in silicon tandem solar cells.
Maximizing the power conversion efficiency (PCE) of perovskite/silicon tandem solar cells that can exceed the Shockley-Queisser single-cell limit requires a high-performing, stable perovskite top cell with a wide bandgap. We developed a stable perovskite solar cell with a bandgap of ~1.7 electron volts that retained more than 80% of its initial PCE of 20.7% after 1000 hours of continuous illumination. Anion engineering of phenethylammonium-based two-dimensional (2D) additives was critical for controlling the structural and electrical properties of the 2D passivation layers based on a lead iodide framework. The high PCE of 26.7% of a monolithic two-terminal wide-bandgap perovskite/silicon tandem solar cell was made possible by the ideal combination of spectral responses of the top and bottom cells. Maximizing the power conversion efficiency (PCE) of perovskite/silicon tandem solar cells that can exceed the Shockley-Queisser single-cell limit requires a high-performing, stable perovskite top cell with a wide bandgap. We developed a stable perovskite solar cell with a bandgap of ~1.7 electron volts that retained more than 80% of its initial PCE of 20.7% after 1000 hours of continuous illumination. Anion engineering of phenethylammonium-based two-dimensional (2D) additives was critical for controlling the structural and electrical properties of the 2D passivation layers based on a lead iodide framework. The high PCE of 26.7% of a monolithic two-terminal wide-bandgap perovskite/silicon tandem solar cell was made possible by the ideal combination of spectral responses of the top and bottom cells. Maximizing the power conversion efficiency (PCE) of perovskite/silicon tandem solar cells that can exceed the Shockley-Queisser single-cell limit requires a high-performing, stable perovskite top cell with a wide bandgap. We developed a stable perovskite solar cell with a bandgap of ~1.7 electron volts that retained more than 80% of its initial PCE of 20.7% after 1000 hours of continuous illumination. Anion engineering of phenethylammonium-based two-dimensional (2D) additives was critical for controlling the structural and electrical properties of the 2D passivation layers based on a lead iodide framework. The high PCE of 26.7% of a monolithic two-terminal wide-bandgap perovskite/silicon tandem solar cell was made possible by the ideal combination of spectral responses of the top and bottom cells.Maximizing the power conversion efficiency (PCE) of perovskite/silicon tandem solar cells that can exceed the Shockley-Queisser single-cell limit requires a high-performing, stable perovskite top cell with a wide bandgap. We developed a stable perovskite solar cell with a bandgap of ~1.7 electron volts that retained more than 80% of its initial PCE of 20.7% after 1000 hours of continuous illumination. Anion engineering of phenethylammonium-based two-dimensional (2D) additives was critical for controlling the structural and electrical properties of the 2D passivation layers based on a lead iodide framework. The high PCE of 26.7% of a monolithic two-terminal wide-bandgap perovskite/silicon tandem solar cell was made possible by the ideal combination of spectral responses of the top and bottom cells. Engineering perovskites with anionsThe bandgap of the perovskite top layer in tandem silicon solar cells must be tuned to ∼1.7 electron volts. Usually, the cation composition is varied because the bromine-rich anion compositions with wide bandgaps are structurally unstable. Kim et al. show that by using phenethylammonium as a two-dimensional additive, along with iodine and thiocyanate, bromine-rich perovskite films can be stabilized. A tandem silicon cell delivered >26% certified power conversion efficiency, and a perovskite device maintained 80% of its initial power conversion efficiency of >20% after 1000 hours under illumination.Science, this issue p. 155Maximizing the power conversion efficiency (PCE) of perovskite/silicon tandem solar cells that can exceed the Shockley-Queisser single-cell limit requires a high-performing, stable perovskite top cell with a wide bandgap. We developed a stable perovskite solar cell with a bandgap of ~1.7 electron volts that retained more than 80% of its initial PCE of 20.7% after 1000 hours of continuous illumination. Anion engineering of phenethylammonium-based two-dimensional (2D) additives was critical for controlling the structural and electrical properties of the 2D passivation layers based on a lead iodide framework. The high PCE of 26.7% of a monolithic two-terminal wide-bandgap perovskite/silicon tandem solar cell was made possible by the ideal combination of spectral responses of the top and bottom cells. |
| Author | Kim, Dong Hoe Kim, Minkyu Shin, Byungha Pae, Seong Ryul Kim, Jekyung Berry, Joseph J. Zhu, Kai Dunfield, Sean P. Dravid, Vinayak Tong, Jinhui Park, Ik Jae Ji, Su Geun Zhang, Fei Kang, Seok Beom Jung, Hee Joon Kim, Jin Young Xiao, Chuanxiao Kim, Daehan Larson, Bryon W. Boonmongkolras, Passarut |
| Author_xml | – sequence: 1 givenname: Daehan orcidid: 0000-0003-2359-1862 surname: Kim fullname: Kim, Daehan organization: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea – sequence: 2 givenname: Hee Joon orcidid: 0000-0001-7963-0897 surname: Jung fullname: Jung, Hee Joon organization: Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA – sequence: 3 givenname: Ik Jae orcidid: 0000-0002-3377-6249 surname: Park fullname: Park, Ik Jae organization: Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea – sequence: 4 givenname: Bryon W. orcidid: 0000-0002-0934-987X surname: Larson fullname: Larson, Bryon W. organization: National Renewable Energy Laboratory, Golden, CO 80401, USA – sequence: 5 givenname: Sean P. orcidid: 0000-0002-2855-4457 surname: Dunfield fullname: Dunfield, Sean P. organization: National Renewable Energy Laboratory, Golden, CO 80401, USA., Materials Science and Engineering Program, University of Colorado Boulder, Boulder, CO 80309, USA – sequence: 6 givenname: Chuanxiao surname: Xiao fullname: Xiao, Chuanxiao organization: National Renewable Energy Laboratory, Golden, CO 80401, USA – sequence: 7 givenname: Jekyung orcidid: 0000-0002-8250-5736 surname: Kim fullname: Kim, Jekyung organization: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea – sequence: 8 givenname: Jinhui orcidid: 0000-0002-8960-1747 surname: Tong fullname: Tong, Jinhui organization: National Renewable Energy Laboratory, Golden, CO 80401, USA – sequence: 9 givenname: Passarut orcidid: 0000-0002-5081-7794 surname: Boonmongkolras fullname: Boonmongkolras, Passarut organization: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea – sequence: 10 givenname: Su Geun surname: Ji fullname: Ji, Su Geun organization: Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea – sequence: 11 givenname: Fei orcidid: 0000-0002-3774-9520 surname: Zhang fullname: Zhang, Fei organization: National Renewable Energy Laboratory, Golden, CO 80401, USA – sequence: 12 givenname: Seong Ryul orcidid: 0000-0002-4362-4011 surname: Pae fullname: Pae, Seong Ryul organization: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea – sequence: 13 givenname: Minkyu orcidid: 0000-0002-6401-9072 surname: Kim fullname: Kim, Minkyu organization: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea – sequence: 14 givenname: Seok Beom surname: Kang fullname: Kang, Seok Beom organization: Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea – sequence: 15 givenname: Vinayak orcidid: 0000-0002-6007-3063 surname: Dravid fullname: Dravid, Vinayak organization: Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA – sequence: 16 givenname: Joseph J. orcidid: 0000-0003-3874-3582 surname: Berry fullname: Berry, Joseph J. organization: National Renewable Energy Laboratory, Golden, CO 80401, USA., Department of Physics, University of Colorado Boulder, Boulder, CO 80309, USA., Renewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, CO 80309, USA – sequence: 17 givenname: Jin Young orcidid: 0000-0001-7746-9972 surname: Kim fullname: Kim, Jin Young organization: Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea – sequence: 18 givenname: Kai orcidid: 0000-0003-0908-3909 surname: Zhu fullname: Zhu, Kai organization: National Renewable Energy Laboratory, Golden, CO 80401, USA – sequence: 19 givenname: Dong Hoe orcidid: 0000-0001-8909-2076 surname: Kim fullname: Kim, Dong Hoe organization: National Renewable Energy Laboratory, Golden, CO 80401, USA., Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea – sequence: 20 givenname: Byungha orcidid: 0000-0001-6845-0305 surname: Shin fullname: Shin, Byungha organization: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/32217753$$D View this record in MEDLINE/PubMed https://www.osti.gov/biblio/1615092$$D View this record in Osti.gov |
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| Snippet | The bandgap of the perovskite top layer in tandem silicon solar cells must be tuned to ∼1.7 electron volts. Usually, the cation composition is varied because... Maximizing the power conversion efficiency (PCE) of perovskite/silicon tandem solar cells that can exceed the Shockley-Queisser single-cell limit requires a... Engineering perovskites with anionsThe bandgap of the perovskite top layer in tandem silicon solar cells must be tuned to ∼1.7 electron volts. Usually, the... |
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| SubjectTerms | Anions Bromine Efficiency Electrical properties Illumination Iodides Iodine Photovoltaic cells Silicon Solar cells |
| Title | Efficient, stable silicon tandem cells enabled by anion-engineered wide-bandgap perovskites |
| URI | https://www.ncbi.nlm.nih.gov/pubmed/32217753 https://www.proquest.com/docview/2383658504 https://www.proquest.com/docview/2384199671 https://www.osti.gov/biblio/1615092 |
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