Monolithic Perovskite-Carrier Selective Contact Silicon Tandem Solar Cells Using Molybdenum Oxide as a Hole Selective Layer
Monolithic perovskite–silicon tandem solar cells with MoOx hole selective contact silicon bottom solar cells show a power conversion efficiency of 8%. A thin 15 nm-thick MoOx contact to n-type Si was used instead of a standard p+ emitter to collect holes and the SiOx/n+ poly-Si structure was deposit...
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| Published in | Energies Vol. 14; no. 11; p. 3108 |
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| Main Authors | , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Basel
MDPI AG
26.05.2021
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| ISSN | 1996-1073 1996-1073 |
| DOI | 10.3390/en14113108 |
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| Abstract | Monolithic perovskite–silicon tandem solar cells with MoOx hole selective contact silicon bottom solar cells show a power conversion efficiency of 8%. A thin 15 nm-thick MoOx contact to n-type Si was used instead of a standard p+ emitter to collect holes and the SiOx/n+ poly-Si structure was deposited on the other side of the device for direct tunneling of electrons and this silicon bottom cell structure shows ~15% of power conversion efficiency. With this bottom carrier selective silicon cell, tin oxide, and subsequent perovskite structure were deposited to fabricate monolithic tandem solar cells. Monolithic tandem structure without ITO interlayer was also compared to confirm the role of MoOx in tandem cells and this tandem structure shows the power conversion efficiency of 3.3%. This research has confirmed that the MoOx layer simultaneously acts as a passivation layer and a hole collecting layer in this tandem structure. |
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| AbstractList | Monolithic perovskite–silicon tandem solar cells with MoOx hole selective contact silicon bottom solar cells show a power conversion efficiency of 8%. A thin 15 nm-thick MoOx contact to n-type Si was used instead of a standard p+ emitter to collect holes and the SiOx/n+ poly-Si structure was deposited on the other side of the device for direct tunneling of electrons and this silicon bottom cell structure shows ~15% of power conversion efficiency. With this bottom carrier selective silicon cell, tin oxide, and subsequent perovskite structure were deposited to fabricate monolithic tandem solar cells. Monolithic tandem structure without ITO interlayer was also compared to confirm the role of MoOx in tandem cells and this tandem structure shows the power conversion efficiency of 3.3%. This research has confirmed that the MoOx layer simultaneously acts as a passivation layer and a hole collecting layer in this tandem structure. |
| Author | Hoyoung Song Dongjin Choi Hae-Seok Lee Seok-Hyun Jeong Jiryang Kim Changhyun Lee Sang-Won Lee Jiyeon Nam Jiyeon Hyun Soohyun Bae Hyunju Lee Donghwan Kim Dowon Pyun Yoonmook Kang |
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| SubjectTerms | carrier selective contact Efficiency Electrodes Glass substrates hole selective layer Metal oxides Molybdenum molybdenum oxide monolithic tandem cell perovskite–silicon tandem solar cell perovskite–silicon tandem solar cell; monolithic tandem cell; carrier selective contact; molybdenum oxide; hole selective layer Photovoltaic cells Silicon wafers T Technology |
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| Title | Monolithic Perovskite-Carrier Selective Contact Silicon Tandem Solar Cells Using Molybdenum Oxide as a Hole Selective Layer |
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