Orbital magnetization in semiconductors
This paper theoretically investigates the orbital magnetization of electron-doped （n-type） semiconductor het-erostructures and of hole-doped （p-type） bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin-orbit coupling...
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| Published in | Chinese physics B Vol. 18; no. 12; pp. 5431 - 5436 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
01.12.2009
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/18/12/050 |
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| Abstract | This paper theoretically investigates the orbital magnetization of electron-doped （n-type） semiconductor het-erostructures and of hole-doped （p-type） bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin-orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin-orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10^-2-10^-1 effective Bohr magneton and 10^-1-1 e^2/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment. |
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| AbstractList | This paper theoretically investigates the orbital magnetization of electron-doped （n-type） semiconductor het-erostructures and of hole-doped （p-type） bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin-orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin-orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10^-2-10^-1 effective Bohr magneton and 10^-1-1 e^2/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment. This paper theoretically investigates the orbital magnetization of electron-doped (n-type) semiconductor heterostructures and of hole-doped (p-type) bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin-orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin-orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10-2-10-1 effective Bohr magneton and 10-1-1 e2/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment. |
| Author | 方诚 王志刚 李树深 张平 |
| AuthorAffiliation | Laboratory for Superlattiees and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Physics Department, East China Institute of Technology, Fuzhou 344000, Jiangxi Province, China Institute of Applied Physics and Computational Mathematics, Beijing 100088, China Center for Applied Physics and Technology, Peking University, Beijing 100871, China |
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| Cites_doi | 10.1103/PhysRevLett.97.026603 10.1103/PhysRevLett.99.197202 10.1088/1674-1056/17/1/051 10.1016/S0038-1098(99)00438-X 10.1103/PhysRevB.74.024408 10.1088/1674-1056/17/6/060 10.1103/PhysRevB.53.7010 10.1126/science.281.5379.951 10.1103/PhysRevB.65.155303 10.1209/epl/i2003-10195-x 10.1103/PhysRevB.71.085308 10.1126/science.287.5455.1019 10.1103/PhysRevLett.95.137204 10.7498/aps.53.596 10.1103/PhysRevLett.95.016801 10.1103/PhysRevB.77.075304 10.1103/PhysRevB.59.14915 10.1103/PhysRevB.69.045304 10.1088/1009-1963/16/2/038 10.1103/PhysRevB.76.094406 10.1103/PhysRevB.62.4245 10.7498/aps.55.2955 10.7498/aps.55.2044 10.1088/1674-1056/17/7/055 10.1103/PhysRevB.76.064406 10.1103/PhysRevLett.95.137205 |
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| References | Zhu B (14) 2006; 55 22 24 26 28 29 Pala M G (23) 2004; 65 Gerchikov L G (20) 1992; 26 Kittel C (27) 1996 Wang Z G (25) 2007; 16 Liu C (15) 2008; 17 16 17 18 19 Zhou W (11) 2006; 55 1 2 3 4 Guo B (10) 2008; 17 5 6 Zheng Z (12) 2004; 53 7 8 9 Zhang J F (13) 2008; 17 21 |
| References_xml | – ident: 3 doi: 10.1103/PhysRevLett.97.026603 – ident: 6 doi: 10.1103/PhysRevLett.99.197202 – volume: 17 start-page: 290 issn: 1674-1056 year: 2008 ident: 10 publication-title: Chin. Phys. doi: 10.1088/1674-1056/17/1/051 – ident: 29 doi: 10.1016/S0038-1098(99)00438-X – year: 1996 ident: 27 publication-title: Introduction to Solid State Physics – ident: 7 doi: 10.1103/PhysRevB.74.024408 – volume: 17 start-page: 2292 issn: 1674-1056 year: 2008 ident: 15 publication-title: Chin. Phys. doi: 10.1088/1674-1056/17/6/060 – ident: 16 – ident: 4 doi: 10.1103/PhysRevB.53.7010 – ident: 26 doi: 10.1126/science.281.5379.951 – ident: 22 doi: 10.1103/PhysRevB.65.155303 – volume: 65 start-page: 850 issn: 0295-5075 year: 2004 ident: 23 publication-title: Europhys. Lett. doi: 10.1209/epl/i2003-10195-x – ident: 19 doi: 10.1103/PhysRevB.71.085308 – ident: 28 doi: 10.1126/science.287.5455.1019 – ident: 1 doi: 10.1103/PhysRevLett.95.137204 – volume: 53 start-page: 596 issn: 0372-736X year: 2004 ident: 12 publication-title: Acta Phys. Sin. doi: 10.7498/aps.53.596 – ident: 17 doi: 10.1103/PhysRevLett.95.016801 – ident: 18 doi: 10.1103/PhysRevB.77.075304 – volume: 26 start-page: 73 year: 1992 ident: 20 publication-title: Sov. Phys. Semicond. – ident: 5 doi: 10.1103/PhysRevB.59.14915 – ident: 24 doi: 10.1103/PhysRevB.69.045304 – volume: 16 start-page: 517 issn: 1009-1963 year: 2007 ident: 25 publication-title: Chin. Phys. doi: 10.1088/1009-1963/16/2/038 – ident: 9 doi: 10.1103/PhysRevB.76.094406 – ident: 21 doi: 10.1103/PhysRevB.62.4245 – volume: 55 start-page: 2955 issn: 0372-736X year: 2006 ident: 14 publication-title: Acta Phys. Sin. doi: 10.7498/aps.55.2955 – volume: 55 start-page: 2044 issn: 0372-736X year: 2006 ident: 11 publication-title: Acta Phys. Sin. doi: 10.7498/aps.55.2044 – volume: 17 start-page: 2689 issn: 1674-1056 year: 2008 ident: 13 publication-title: Chin. Phys. doi: 10.1088/1674-1056/17/7/055 – ident: 8 doi: 10.1103/PhysRevB.76.064406 – ident: 2 doi: 10.1103/PhysRevLett.95.137205 |
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| Snippet | This paper theoretically investigates the orbital magnetization of electron-doped （n-type） semiconductor het-erostructures and of hole-doped （p-type） bulk... This paper theoretically investigates the orbital magnetization of electron-doped (n-type) semiconductor heterostructures and of hole-doped (p-type) bulk... |
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| SubjectTerms | Bohr magneton Conductance Halls Heterostructures Joining Magnetization N-type semiconductors Orbitals P-type semiconductors Semiconductors Splitting Symmetry 二维电子 半导体异质结构 哈密顿描述 塞曼分裂 玻尔磁子 电子掺杂 自旋轨道耦合 |
| Title | Orbital magnetization in semiconductors |
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