Crystal growth of InGaAs/InAlAs quantum wells on InP(110) by MBE - Yasuda, Yusuke; Koh, Shinji; Ikeda, Kazuhiro; Kawaguchi, Hitoshi (Journal of crystal growth, 2013)
Keywords: A3. Molecular beam epitaxy; A3. Quantum wells; Applied sciences; B2. Nonlinear optic materials; B2. Semiconducting III–V materials; B3. Laser diodes; Cross-disciplinary physics: materials science; rheology; Crystal defects; Crystal growth; Crystals; Electronics; Exact sciences and technology; Indium gallium arsenides; Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Nanoscale materials and structures: fabrication and characterization; Other topics in nanoscale materials and structures; Physics; Quantum wells; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transmission electron microscopy; A3. Quantum wells; A3. Molecular beam epitaxy; B3. Laser diodes; B2. Nonlinear optic materials; B2. Semiconducting III–V materials; Buffer layer; Crystal growth; Defect density; Gallium arsenides; B2. Semiconducting III―V materials; Epitaxial layers; Barrier layer; Quantum wells; Laser diodes; Crystal perfection; Indium arsenides; Operating conditions; Semiconductor lasers; Transmission electron microscopy; Molecular beam epitaxy; Absorption spectra; Nanostructured materials; Heterostructures; Spintronics; III-V semiconductors