Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack

Effects of NH3 rapid thermal annealing （RTA） on the interface and electrical properties of Gd-doped HfO2 （GDH）/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si sys...

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Published inJournal of rare earths Vol. 31; no. 4; pp. 395 - 399
Main Author 杨萌萌 屠海令 杜军 魏峰 熊玉华 赵鸿斌
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.2013
Subjects
Annealing
Density
Electrical properties
Gd-doped HfO2
Hafnium oxide
high-k
interface
Leakage current
MOS电容器
NH3
NH3 annealing
Rare earth metals
rare earths
Silicon
Stacks
堆栈
快速热退火
接口特性
掺钆
漏电流密度
电气性能
Gd-doped HfO2
high-k
NH3 annealing
interface
electrical properties
rare earths
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ISSN1002-0721
2509-4963
DOI10.1016/s1002-0721(12)60293-2

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Summary:Effects of NH3 rapid thermal annealing （RTA） on the interface and electrical properties of Gd-doped HfO2 （GDH）/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si system. NH3 annealing also led to the decrease of interface layer thickness. The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2× 10-3 A/cm2. After NH3 annealing, the leakage current density was about one order of magnitude lower （3.9× 104 A/cm2）. The effective permittivity extracted from the C-V curves was -14.1 and 13.1 for samples without and with RTA, respectively.
Bibliography:Effects of NH3 rapid thermal annealing （RTA） on the interface and electrical properties of Gd-doped HfO2 （GDH）/Si stack were investigated. The process of NH3 annealing could significantly affect the crystallization, stoichiometric properties of GDH film and the interface characteristic of GDH/Si system. NH3 annealing also led to the decrease of interface layer thickness. The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2× 10-3 A/cm2. After NH3 annealing, the leakage current density was about one order of magnitude lower （3.9× 104 A/cm2）. The effective permittivity extracted from the C-V curves was -14.1 and 13.1 for samples without and with RTA, respectively.
11-2788/TF
Gd-doped HfO2; high-k; NH3 annealing; interface; electrical properties; rare earths
YANG Mengmeng , TU Hailing , DU Jun , WEI Feng , XIONG Yuhua ZHAO Hongbin （1. Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China; 2. National Engineering Research Center for Semiconductor Materials＇, General Research Institute for Nonferrous Metals＇, Beijing 100088, China）
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ISSN:1002-0721
2509-4963
DOI:10.1016/s1002-0721(12)60293-2