Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

• Published in: IEEE transactions on nuclear science Vol. 68; no. 3; pp. 305 - 311
• Main Authors: Tonigan, Andrew M., Ball, Dennis, Vizkelethy, Gyorgy, Black, Jeffrey, Black, Dolores, Trippe, James, Bielejec, Edward, Alles, Michael L., Reed, Robert, Schrimpf, Ronald D.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.03.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Energy transfer; ENGINEERING; Experimental data; Interface quality; Interfaces; Ions; Leakage currents; Linear energy transfer (LET); Logic gates; microbeam; Radiation effects; Radiative recombination; Recombination; Silicon; silicon-on-insulator (SOI); Single Event Effects; Surface charge; surface recombination; Transient analysis
• ISSN: 0018-9499; 1558-1578; 1558-1578
• DOI: 10.1109/TNS.2021.3056898

Semiconductor-insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV <inline-formula> <tex-math notation="LaTeX">> 10^{5} </tex-math></inline-formula> cm/s.