Ultrasonic Bonding of Ag Ribbon on Si Wafers With Various Backside Metallization

Ultrasonic ribbon bonding has gained much attention due to the endeavor of achieving higher module performance in power electronic packaging. Among all the ribbon materials, Ag ribbon is a promising candidate due to its superior electrical properties. However, research which has reported the bonding...

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Published inInternational journal of manufacturing, materials, and mechanical engineering Vol. 13; no. 1; pp. 1 - 11
Main Authors Chuang, Tung-Han, Chiang, Meng-Ting, Lee, Pei-Ing, Lin, Ang-Ying
Format Journal Article
LanguageEnglish
Published Hershey IGI Global 01.01.2024
Subjects
Alloys
Electric properties
Electrical properties
Electronic packaging
Feasibility
Gold
Manufacturing
Mechanical engineering
Metallizing
Metals
Modules
Oxidation
Packaging
Power electronics
Semiconductors
Temperature
Wafers
Wire
Online AccessGet full text
ISSN2156-1680
2156-1672
2156-1672
DOI10.4018/IJMMME.333626

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Abstract Ultrasonic ribbon bonding has gained much attention due to the endeavor of achieving higher module performance in power electronic packaging. Among all the ribbon materials, Ag ribbon is a promising candidate due to its superior electrical properties. However, research which has reported the bonding of the ribbon on chip side is scant. Thus, in this study, the authors carried out bonding of the Ag ribbon on various types of metallized wafers to examine the feasibility of Ag ribbon, simulating the bonding scenario on the chip side in power modules. Results revealed that bonding of the Ag ribbon is feasible on those wafers metallized Ag on top. The authors also discussed the implications for the bondability of Ag ribbon with different types of metallization layers.
AbstractList Ultrasonic ribbon bonding has gained much attention due to the endeavor of achieving higher module performance in power electronic packaging. Among all the ribbon materials, Ag ribbon is a promising candidate due to its superior electrical properties. However, research which has reported the bonding of the ribbon on chip side is scant. Thus, in this study, the authors carried out bonding of the Ag ribbon on various types of metallized wafers to examine the feasibility of Ag ribbon, simulating the bonding scenario on the chip side in power modules. Results revealed that bonding of the Ag ribbon is feasible on those wafers metallized Ag on top. The authors also discussed the implications for the bondability of Ag ribbon with different types of metallization layers.
Audience Academic
Author Chiang, Meng-Ting
Lee, Pei-Ing
Chuang, Tung-Han
Lin, Ang-Ying
AuthorAffiliation National Taiwan University, Taiwan
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  surname: Lin
  fullname: Lin, Ang-Ying
  organization: National Taiwan University, Taiwan
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SubjectTerms Alloys
Electric properties
Electrical properties
Electronic packaging
Feasibility
Gold
Manufacturing
Mechanical engineering
Metallizing
Metals
Modules
Oxidation
Packaging
Power electronics
Semiconductors
Temperature
Wafers
Wire
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