石立春, 刘. 吴. 胡. (2010). Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures. Chinese physics B, 19(5), 530-535. https://doi.org/10.1088/1674-1056/19/5/057303
Chicago Style (17th ed.) Citation石立春, 刘红侠 吴笑峰 胡仕刚. "Characteristics and Parameter Extraction for NiGe/n-type Ge Schottky Diode with Variable Annealing Temperatures." Chinese Physics B 19, no. 5 (2010): 530-535. https://doi.org/10.1088/1674-1056/19/5/057303.
MLA (9th ed.) Citation石立春, 刘红侠 吴笑峰 胡仕刚. "Characteristics and Parameter Extraction for NiGe/n-type Ge Schottky Diode with Variable Annealing Temperatures." Chinese Physics B, vol. 19, no. 5, 2010, pp. 530-535, https://doi.org/10.1088/1674-1056/19/5/057303.
Warning: These citations may not always be 100% accurate.