Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region - 宋庆文 张玉明 张义门 张倩 吕红亮 (Chinese physics B, 2010)
Keywords: Barriers; Devices; Drift; Electric potential; Guidelines; Rectifiers; Silicon carbide; Voltage; 发生变化; 外延层; 整流器; 比导通电阻; 漂移区; 生长过程; 碳化硅; 肖特基势垒