APA (7th ed.) Citation

Kim, D., & Kim, H. B. (2013). The reason of degradation in electrical properties of ZnO: Al thin films annealed with various post-annealing temperature. Current applied physics, 13(9), 2001-2004. https://doi.org/10.1016/j.cap.2013.08.008

Chicago Style (17th ed.) Citation

Kim, Deok-Kyu, and Hong Bae Kim. "The Reason of Degradation in Electrical Properties of ZnO: Al Thin Films Annealed with Various Post-annealing Temperature." Current Applied Physics 13, no. 9 (2013): 2001-2004. https://doi.org/10.1016/j.cap.2013.08.008.

MLA (9th ed.) Citation

Kim, Deok-Kyu, and Hong Bae Kim. "The Reason of Degradation in Electrical Properties of ZnO: Al Thin Films Annealed with Various Post-annealing Temperature." Current Applied Physics, vol. 13, no. 9, 2013, pp. 2001-2004, https://doi.org/10.1016/j.cap.2013.08.008.