High-Performance p-Channel LDMOS Transistors and Wide-Range Voltage Platform Technology Using Novel p-Channel Structure - Shimamoto, S.; Yanagida, Y.; Shirakawa, S.; Miyakoshi, K.; Oshima, T.; Sakano, J.; Wada, S.; Noguchi, J. (IEEE transactions on electron devices, 2013)
Keywords: Applied sciences; Channels; Compound structure devices; Drains; Electric potential; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Harmonic analysis; High-voltage (HV) techniques; Imaging; Ion implantation; Layout; Metals; MOSFETs; Optimization; Other multijunction devices. Power transistors. Thyristors; Platforms; power MOSFETs; power semiconductor devices; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; silicon-on-insulator (SOI) technology; Transistors; Voltage; Surface field; High-voltage (HV) techniques; High strength current; High performance; MOSFET; Lateral diffusion; Channel structure; MOS structure; n channel; Power electronics; silicon-on-insulator (SOI) technology; Surface structure; Power transistor; Silicon on insulator technology; p channel; Disruptive voltage; power MOSFETs; High-voltage techniques; Drain current; Power device; power semiconductor devices; MOS transistor; Double diffusion; On off effect