Shimamoto, S., Yanagida, Y., Shirakawa, S., Miyakoshi, K., Oshima, T., Sakano, J., . . . Noguchi, J. (2013). High-Performance p-Channel LDMOS Transistors and Wide-Range Voltage Platform Technology Using Novel p-Channel Structure. IEEE transactions on electron devices, 60(1), 360-365. https://doi.org/10.1109/TED.2012.2228202
Chicago Style (17th ed.) CitationShimamoto, S., Y. Yanagida, S. Shirakawa, K. Miyakoshi, T. Oshima, J. Sakano, S. Wada, and J. Noguchi. "High-Performance P-Channel LDMOS Transistors and Wide-Range Voltage Platform Technology Using Novel P-Channel Structure." IEEE Transactions on Electron Devices 60, no. 1 (2013): 360-365. https://doi.org/10.1109/TED.2012.2228202.
MLA (9th ed.) CitationShimamoto, S., et al. "High-Performance P-Channel LDMOS Transistors and Wide-Range Voltage Platform Technology Using Novel P-Channel Structure." IEEE Transactions on Electron Devices, vol. 60, no. 1, 2013, pp. 360-365, https://doi.org/10.1109/TED.2012.2228202.