Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy
We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth cond...
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| Published in | Applied physics express Vol. 9; no. 12; pp. 125601 - 125604 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English Japanese |
| Published |
The Japan Society of Applied Physics
01.12.2016
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| Online Access | Get full text |
| ISSN | 1882-0778 1882-0786 |
| DOI | 10.7567/APEX.9.125601 |
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| Abstract | We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth conditions in terms of the contribution of the surface state. We applied the theoretical approach to study the growth processes of InN(0001) and by metalorganic vapor phase epitaxy. Calculation results reproduced the difference in optimum growth temperature. That is, we successfully developed a new theoretical approach that can predict growth processes on various growth surfaces. |
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| AbstractList | We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth conditions in terms of the contribution of the surface state. We applied the theoretical approach to study the growth processes of InN(0001) and by metalorganic vapor phase epitaxy. Calculation results reproduced the difference in optimum growth temperature. That is, we successfully developed a new theoretical approach that can predict growth processes on various growth surfaces. We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth conditions in terms of the contribution of the surface state. We applied the theoretical approach to study the growth processes of InN(0001) and by metalorganic vapor phase epitaxy. Calculation results reproduced the difference in optimum growth temperature. That is, we successfully developed a new theoretical approach that can predict growth processes on various growth surfaces. |
| Author | Kakimoto, Koichi Kusaba, Akira Kangawa, Yoshihiro Kempisty, Pawel Koukitu, Akinori Shiraishi, Kenji |
| Author_xml | – sequence: 1 givenname: Akira surname: Kusaba fullname: Kusaba, Akira email: akira.kusaba@kyudai.jp organization: Kyushu University Department of Aeronautics and Astronautics, Fukuoka 819-0395, Japan – sequence: 2 givenname: Yoshihiro surname: Kangawa fullname: Kangawa, Yoshihiro organization: Nagoya University Institute of Materials and Systems for Sustainability, Nagoya 464-8603, Japan – sequence: 3 givenname: Pawel surname: Kempisty fullname: Kempisty, Pawel organization: Polish Academy of Sciences Institute of High Pressure Physics, Sokolowska 29/37, 01-142 Warsaw, Poland – sequence: 4 givenname: Kenji surname: Shiraishi fullname: Shiraishi, Kenji organization: Nagoya University Institute of Materials and Systems for Sustainability, Nagoya 464-8603, Japan – sequence: 5 givenname: Koichi surname: Kakimoto fullname: Kakimoto, Koichi organization: Kyushu University Research Institute for Applied Mechanics, Kasuga, Fukuoka 816-8580, Japan – sequence: 6 givenname: Akinori surname: Koukitu fullname: Koukitu, Akinori organization: Tokyo University of Agriculture and Technology Department of Applied Chemistry, Koganei, Tokyo 184-8588, Japan |
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| Cites_doi | 10.1143/JPSJ.59.3455 10.1002/pssc.200303301 10.1063/1.1316015 10.1021/acs.jpcc.5b00836 10.1143/JJAP.37.762 10.1103/PhysRevLett.92.086102 10.1143/JJAP.36.L750 10.1103/PhysRevLett.57.106 10.1063/1.458452 10.1103/PhysRevB.89.081305 10.1103/PhysRevB.35.9636 10.1016/j.jcrysgro.2009.01.099 10.3390/ma6083309 10.1103/PhysRevLett.77.3865 10.1143/JJAP.36.L1136 10.1103/PhysRevLett.57.102 10.1016/S0039-6028(01)01210-9 10.7567/JJAP.55.05FM01 10.1063/1.2738381 10.1103/PhysRevB.35.9625 10.1103/PhysRevB.13.5188 10.1016/0039-6028(90)90756-X 10.1002/pssc.201100390 |
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| Title | Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy |
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