Stacking faults in silicon carbide

We review of our theoretical work on various stacking faults in SiC polytypes. Since the discovery of the electronic degradation phenomenon in 4H–SiC p–i–n diodes, stacking faults in SiC have become a subject of intensive study around the globe. At the beginning of our research project, the aim was...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 340-342; pp. 165 - 170
Main Authors Iwata, H.P, Lindefelt, U, Öberg, S, Briddon, P.R
Format Journal Article
LanguageEnglish
Published Elsevier B.V 31.12.2003
Subjects
Dislocations
Quantum well
Scientific Computing
Solid–solid phase transition
Stacking fault
Teknisk-vetenskapliga beräkningar
Quantum well
Stacking fault
Solid–solid phase transition
Dislocations
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ISSN0921-4526
1873-2135
1873-2135
DOI10.1016/j.physb.2003.09.045

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Summary:We review of our theoretical work on various stacking faults in SiC polytypes. Since the discovery of the electronic degradation phenomenon in 4H–SiC p–i–n diodes, stacking faults in SiC have become a subject of intensive study around the globe. At the beginning of our research project, the aim was to find the culprit for the degradation phenomenon, but in the course of this work we uncovered a wealth of information for the general properties of stacking faults in SiC. An intuitive perspective to the diverse nature of stacking faults in SiC will be given in this conference report.
Bibliography:ObjectType-Article-2
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ObjectType-Feature-1
content type line 23
ISSN:0921-4526
1873-2135
1873-2135
DOI:10.1016/j.physb.2003.09.045