Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs With an ITO Emission Window Layer

We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emiss...

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Published inIEEE photonics journal Vol. 12; no. 6; pp. 1 - 9
Main Authors Tsai, Yi-Lin, Huang, Sheng-Kai, Huang, Huang-Hsiung, Yang, Shu-Mei, Liang, Kai-Ling, Kuo, Wei-Hung, Fang, Yen-Hsiang, Wu, Chih-I, Wang, Shou-Wei, Shih, Hsiang-Yun, Xu, Zhiyu, Cho, Minkyu, Shen, Shyh-Chiang, Lin, Chien-Chung
Format Journal Article
LanguageEnglish
Published Piscataway IEEE 01.12.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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ISSN1943-0655
1943-0647
DOI10.1109/JPHOT.2020.3037220

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Abstract We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted <0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices.
AbstractList We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted <0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices.
Author Lin, Chien-Chung
Fang, Yen-Hsiang
Huang, Huang-Hsiung
Wu, Chih-I
Xu, Zhiyu
Wang, Shou-Wei
Liang, Kai-Ling
Cho, Minkyu
Tsai, Yi-Lin
Yang, Shu-Mei
Shih, Hsiang-Yun
Huang, Sheng-Kai
Kuo, Wei-Hung
Shen, Shyh-Chiang
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Snippet We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to...
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SubjectTerms Arrhenius plot
Current injection
Current-voltage characteristics
Electrical properties
Emission
Gallium nitride
Gallium nitrides
GaN
Leakage current
Leakage currents
Light emitting diodes
low temperature current-voltage characterization
micro LEDs
Quantum efficiency
Temperature dependence
Ultra-violet emission
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Title Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs With an ITO Emission Window Layer
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