Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs With an ITO Emission Window Layer
We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emiss...
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Published in | IEEE photonics journal Vol. 12; no. 6; pp. 1 - 9 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Piscataway
IEEE
01.12.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
ISSN | 1943-0655 1943-0647 |
DOI | 10.1109/JPHOT.2020.3037220 |
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Abstract | We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted <0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices. |
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AbstractList | We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted <0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices. |
Author | Lin, Chien-Chung Fang, Yen-Hsiang Huang, Huang-Hsiung Wu, Chih-I Xu, Zhiyu Wang, Shou-Wei Liang, Kai-Ling Cho, Minkyu Tsai, Yi-Lin Yang, Shu-Mei Shih, Hsiang-Yun Huang, Sheng-Kai Kuo, Wei-Hung Shen, Shyh-Chiang |
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Cites_doi | 10.1038/nphoton.2006.36 10.1016/j.watres.2010.11.015 10.1364/OE.27.00A643 10.1063/1.3276156 10.1021/acsami.7b03386 10.1063/1.1784882 10.1016/j.renene.2005.08.034 10.1093/nar/20.2.225 10.1063/1.3668104 10.1109/TED.2015.2443135 10.1038/nphoton.2012.328 10.7567/APEX.10.032101 10.1364/PRJ.7.000B41 10.1109/IPCon.2019.8908371 10.1109/JSTQE.2017.2681039 10.1038/s41598-020-59442-0 10.1364/OE.26.021324 10.1143/JJAP.40.L583 10.1364/OE.23.032504 10.1109/2944.999183 10.1063/1.1593218 10.1088/1361-6528/ab4201 10.1063/1.4940949 10.1088/0268-1242/29/8/084004 10.1063/1.1719264 |
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SubjectTerms | Arrhenius plot Current injection Current-voltage characteristics Electrical properties Emission Gallium nitride Gallium nitrides GaN Leakage current Leakage currents Light emitting diodes low temperature current-voltage characterization micro LEDs Quantum efficiency Temperature dependence Ultra-violet emission |
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Title | Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs With an ITO Emission Window Layer |
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