Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs - Kim, Sanghyeon; Song, Jin Dong; Alam, M. A.; Kim, Hyung-Jun; Kim, Seong Kwang; Shin, Sanghoon; Han, Jae-Hoon; Geum, Dae-Myeong; Shim, Jae-Phil; Lee, Subin; Kim, Hansung; Ju, Gunwu (IEEE journal of the Electron Devices Society, 2019)
Keywords: Bypasses; Electric contacts; Electrical resistivity; Heat; Indium gallium arsenide; Indium gallium arsenides; InGaAs MOSFETs; InGaAs-OI; Molybdenum; monolithic 3D; MOSFET; MOSFETs; Ni-InGaAs; Nickel; Reliability; Self alignment; self-heating; Semiconductor devices; Thermal resistance; Thermal stability; Transistors