Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11–1)/Si (100) heterostructure
Surface interfaces of thin magnesium oxide films elaborated onto Si(100)–(2×1) substrates were characterized using scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, atomic force microscopy, and high-resolution transmission electron microscopy. We report that a flat and hig...
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| Published in | Surface science Vol. 642; pp. L1 - L5 |
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| Main Authors | , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
01.12.2015
Elsevier |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0039-6028 0167-2584 1879-2758 |
| DOI | 10.1016/j.susc.2015.08.003 |
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| Abstract | Surface interfaces of thin magnesium oxide films elaborated onto Si(100)–(2×1) substrates were characterized using scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, atomic force microscopy, and high-resolution transmission electron microscopy. We report that a flat and highly homogeneous magnesium oxide with well-defined interfaces could be grown at room temperature (RT) by repeating alternate adsorption of Mg atomic monolayer and O2 on Si(100). RT oxidation process of the first Mg monolayer plays a crucial role as driving force allowing a partial decomposition of amorphous ultra-thin Mg2Si at the Mg/Si interface to form more magnesium oxide in the surface. This process induces crystallization of the interfacial Mg2Si thin film and then gives arise to an unexpected MgOx/Mg2Si(11–1)/Si(100) heterostructure. MgOx monolayer displays a band gap of about 6eV and exhibits a weak RMS roughness on large areas. |
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| AbstractList | Surface interfaces of thin magnesium oxide films elaborated onto Si(100)–(2×1) substrates were characterized using scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, atomic force microscopy, and high-resolution transmission electron microscopy. We report that a flat and highly homogeneous magnesium oxide with well-defined interfaces could be grown at room temperature (RT) by repeating alternate adsorption of Mg atomic monolayer and O2 on Si(100). RT oxidation process of the first Mg monolayer plays a crucial role as driving force allowing a partial decomposition of amorphous ultra-thin Mg2Si at the Mg/Si interface to form more magnesium oxide in the surface. This process induces crystallization of the interfacial Mg2Si thin film and then gives arise to an unexpected MgOx/Mg2Si(11–1)/Si(100) heterostructure. MgOx monolayer displays a band gap of about 6eV and exhibits a weak RMS roughness on large areas. Surface interfaces of thin magnesium oxide films elaborated onto Si(100)–(2 × 1) substrates were characterized using scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, atomic force microscopy, and high-resolution transmission electron microscopy. We report that a flat and highly homogeneous magnesium oxide with well-defined interfaces could be grown at room temperature (RT) by repeating alternate adsorption of Mg atomic monolayer and O2 on Si(100). RT oxidation process of the first Mg monolayer plays a crucial role as driving force allowing a partial decomposition of amorphous ultra-thin Mg2Si at the Mg/Si interface to form more magnesium oxide in the surface. This process induces crystallization of the interfacial Mg2Si thin film and then gives arise to an unexpected MgOx/Mg2Si(11–1)/Si(100) heterostructure. MgOx monolayer displays a band gap of about 6 eV and exhibits a weak RMS roughness on large areas. |
| Author | Hemeryck, A. Rochdi, N. Daineche, R. Baronnet, A. Djafari Rouhani, M. Bertoglio, M. Girardeaux, C. Bocquet, M. Sarpi, B. Perrin-Toinin, J. Vizzini, S. |
| Author_xml | – sequence: 1 givenname: B. surname: Sarpi fullname: Sarpi, B. organization: Aix Marseille Univ, IM2NP, Fac Sci St Jérôme, F-13397 Marseille, France – sequence: 2 givenname: N. surname: Rochdi fullname: Rochdi, N. organization: Aix Marseille Univ, CINaM CNRS, F-13288 Marseille, France – sequence: 3 givenname: R. surname: Daineche fullname: Daineche, R. organization: Aix Marseille Univ, IM2NP, Fac Sci St Jérôme, F-13397 Marseille, France – sequence: 4 givenname: M. surname: Bertoglio fullname: Bertoglio, M. organization: Aix Marseille Univ, IM2NP, Fac Sci St Jérôme, F-13397 Marseille, France – sequence: 5 givenname: C. surname: Girardeaux fullname: Girardeaux, C. organization: Aix Marseille Univ, IM2NP, Fac Sci St Jérôme, F-13397 Marseille, France – sequence: 6 givenname: A. surname: Baronnet fullname: Baronnet, A. organization: Aix Marseille Univ, CINaM CNRS, F-13288 Marseille, France – sequence: 7 givenname: J. surname: Perrin-Toinin fullname: Perrin-Toinin, J. organization: Aix Marseille Univ, IM2NP, Fac Sci St Jérôme, F-13397 Marseille, France – sequence: 8 givenname: M. surname: Bocquet fullname: Bocquet, M. organization: Aix Marseille Univ, IM2NP, Fac Sci St Jérôme, F-13397 Marseille, France – sequence: 9 givenname: M. surname: Djafari Rouhani fullname: Djafari Rouhani, M. organization: CNRS LAAS, 7 avenue du Colonel Roche, F-31400 Toulouse, France – sequence: 10 givenname: A. surname: Hemeryck fullname: Hemeryck, A. organization: CNRS LAAS, 7 avenue du Colonel Roche, F-31400 Toulouse, France – sequence: 11 givenname: S. surname: Vizzini fullname: Vizzini, S. organization: Aix Marseille Univ, IM2NP, Fac Sci St Jérôme, F-13397 Marseille, France |
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| Keywords | Interfaces Oxide Thin films Silicides Surface |
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| Snippet | Surface interfaces of thin magnesium oxide films elaborated onto Si(100)–(2×1) substrates were characterized using scanning tunneling microscopy and... Surface interfaces of thin magnesium oxide films elaborated onto Si(100)–(2 × 1) substrates were characterized using scanning tunneling microscopy and... |
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| SubjectTerms | Chemical Sciences Interfaces Material chemistry Oxide Silicides Surface Thin films |
| Title | Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11–1)/Si (100) heterostructure |
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