Characteristics of a plasma information variable in phenomenology-based, statistically-tuned virtual metrology to predict silicon dioxide etching depth - Jang, Yunchang; Roh, Hyun-Joon; Park, Seolhye; Jeong, Sangmin; Ryu, Sanywon; Kwon, Ji-Won; Kim, Nam-Kyun; Kim, Gon-Ho (Current applied physics, 2019)
Keywords: Optical emission spectroscopy (OES); PI-VM; Plasma information (PI) variable; Silicon oxide etching; Statistical selection method; Virtual metrology (VM); 물리학; PI-VM; Silicon oxide etching; Virtual metrology (VM); Optical emission spectroscopy (OES); Plasma information (PI) variable; Statistical selection method