Effects of notches on the order of flux-closure state formation in bi-rings by micromagnetic simulation

• Published in: Chinese physics B Vol. 20; no. 12; pp. 421 - 425
• Main Author: 何淑婷 常双全 史慧刚
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.12.2011
• Subjects: Devices; Formations; I-环; Logic; Notches; Rings (mathematics); Simulation; Symmetry; 封闭状态; 状态控制; 磁模拟; 缺口; 轴对称; 通量; 逻辑器件
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/20/12/127503

The effects of the number and the location of notches on the formation of flux-closure states in bi-rings with fields applied in the x direction （i.e., along the short axis direction of hi-rings） and y direction （i.e., along the long axis direction of bi-rings） are investigated using micromagnetic simulation. For the bi-rings with one notch and the bi-rings with two notches symmetric about y axis, the order of flux-closure state formation in each ring can be controlled. But the flux-closure state forms simultaneously in each ring for the bi-rings with two notches symmetric about x axis. For the bi-rings with two notches that are symmetric neither about x axis nor about y axis, only one ring can form a flux- closure state in the y-direction field and no fluxclosure state can be found in rings in the x-direction field. Therefore, logic states can be defined by controlling the order of flux-closure state formation, which can be utilized in future logic devices.