The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a lowtemperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promo...

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Published in	Chinese physics B Vol. 20; no. 12; pp. 400 - 403
Main Author	乐伶聪赵德刚吴亮亮邓懿江德生朱建军刘宗顺王辉张书明张宝顺杨辉
Format	Journal Article
Language	English
Published	IOP Publishing 01.12.2011
Subjects	Buffer layers Chemical vapor deposition Coalescing Density Gallium nitrides GaN Grain size Monitors Nucleation Sapphire 化学气相沉积法反射率测量外延层生长显微镜观测有机金属氮化镓蓝宝石衬底
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ISSN	1674-1056 2058-3834 1741-4199
DOI	10.1088/1674-1056/20/12/127306

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Summary:	In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a lowtemperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the CaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.
Bibliography:	In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a lowtemperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the CaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density. X-ray diffraction, metalorganic chemical vapour deposition, nitrides 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1674-1056 2058-3834 1741-4199
DOI:	10.1088/1674-1056/20/12/127306