The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition - 乐伶聪 赵德刚 吴亮亮 邓懿 江德生 朱建军 刘宗顺 王辉 张书明 张宝顺 杨辉 (Chinese physics B, 2011)
Keywords: Buffer layers; Chemical vapor deposition; Coalescing; Density; Gallium nitrides; GaN; Grain size; Monitors; Nucleation; Sapphire; 化学气相沉积法; 反射率测量; 外延层生长; 显微镜观测; 有机金属; 氮化镓; 蓝宝石衬底