The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition
In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a lowtemperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promo...
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| Published in | Chinese physics B Vol. 20; no. 12; pp. 400 - 403 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
01.12.2011
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 1741-4199 |
| DOI | 10.1088/1674-1056/20/12/127306 |
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| Abstract | In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a lowtemperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the CaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density. |
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| AbstractList | In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density. In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a lowtemperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the CaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density. |
| Author | 乐伶聪 赵德刚 吴亮亮 邓懿 江德生 朱建军 刘宗顺 王辉 张书明 张宝顺 杨辉 |
| AuthorAffiliation | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China |
| Author_xml | – sequence: 1 fullname: 乐伶聪 赵德刚 吴亮亮 邓懿 江德生 朱建军 刘宗顺 王辉 张书明 张宝顺 杨辉 |
| BookMark | eNqNkEFrFDEUgIO04Lb6FyTevIz7XpLJzIAXKVqFopf2JoRs5mUnMjuZJllL_72zbumhFCo8CITvSx7fGTuZ4kSMvUP4iNC2a9SNqhBqvRawRrFMI0G_YisBdVvJVqoTtnqEXrOznH8DaAQhV-zX9UCcvCdXMo-eZzvPQ0jEp1BS6G0JceLLXNoffJviXRn45p7vqNgxpq2dguNuoF1wduR_7Bz3ifc0xxwO4ht26u2Y6e3Dec5uvn65vvhWXf28_H7x-apyslOlsgCkfN-iUk2tbNtjraXvqOk7haQAN6r2KPSmA9u31CDIzgM5L50TvtPynH04vjuneLunXMwuZEfjaCeK-2ywqaXqpKzFguoj6lLMOZE3cwo7m-4NgjnkNIdS5lDKiOVGmGPORfz0RHSh_MtTkg3jyzoe9RDn__-yesZ5ljVz7xf-_cOKQ5y2t2HaPloKJOoOpfwL_-WkOA |
| CitedBy_id | crossref_primary_10_1134_S1063782618060143 crossref_primary_10_1088_1674_1056_22_1_017801 crossref_primary_10_1007_s12200_018_0857_2 crossref_primary_10_1016_j_spmi_2015_10_027 |
| Cites_doi | 10.1063/1.117816 10.1063/1.115687 10.1016/S0022-3697(73)80090-3 10.1016/0022-0248(77)90186-5 10.1088/1674-1056/19/12/124211 10.1088/1674-1056/19/5/057802 10.1143/JJAP.30.L1705 10.1116/1.579805 10.1016/0022-0248(94)90979-2 10.1016/0022-0248(74)90050-5 10.1016/j.apsusc.2004.10.135 10.1063/1.116883 10.1063/1.361398 10.1149/1.2134442 10.1063/1.366749 10.1016/0022-0248(72)90175-3 10.1063/1.1652845 |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP ~WA AAYXX CITATION 7QF 7QQ 7SR 7U5 8FD H8D JG9 L7M |
| DOI | 10.1088/1674-1056/20/12/127306 |
| DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 维普中文期刊数据库 中文科技期刊数据库- 镜像站点 CrossRef Aluminium Industry Abstracts Ceramic Abstracts Engineered Materials Abstracts Solid State and Superconductivity Abstracts Technology Research Database Aerospace Database Materials Research Database Advanced Technologies Database with Aerospace |
| DatabaseTitle | CrossRef Materials Research Database Aerospace Database Engineered Materials Abstracts Aluminium Industry Abstracts Technology Research Database Solid State and Superconductivity Abstracts Ceramic Abstracts Advanced Technologies Database with Aerospace |
| DatabaseTitleList | Materials Research Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| DocumentTitleAlternate | The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition |
| EISSN | 2058-3834 1741-4199 |
| EndPage | 403 |
| ExternalDocumentID | 10_1088_1674_1056_20_12_127306 40316913 |
| GroupedDBID | 02O 1JI 1WK 29B 2RA 4.4 5B3 5GY 5VR 5VS 5ZH 6J9 7.M 7.Q 92L AAGCD AAJIO AAJKP AALHV AATNI ABHWH ABJNI ABQJV ACAFW ACGFS ACHIP AEFHF AENEX AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG ATQHT AVWKF AZFZN BBWZM CCEZO CCVFK CEBXE CHBEP CJUJL CQIGP CRLBU CS3 DU5 EBS EDWGO EJD EMSAF EPQRW EQZZN FA0 FEDTE HAK HVGLF IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGP UCJ W28 ~WA AAPBV ABPTK CDYEO UNR -SA -S~ AAYXX ACARI ADEQX AEINN AERVB AGQPQ AOAED ARNYC CAJEA CITATION Q-- U1G U5K 7QF 7QQ 7SR 7U5 8FD H8D JG9 L7M |
| ID | FETCH-LOGICAL-c394t-a00e4fd8144754a8d1563f9e7d941e401b45f126b90ad8e71039f0ecf3cc2f963 |
| IEDL.DBID | IOP |
| ISSN | 1674-1056 |
| IngestDate | Thu Oct 02 04:13:46 EDT 2025 Wed Oct 01 04:39:37 EDT 2025 Thu Apr 24 23:09:58 EDT 2025 Tue Nov 10 14:15:06 EST 2020 Mon May 13 15:57:23 EDT 2019 Wed Feb 14 10:25:50 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 12 |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c394t-a00e4fd8144754a8d1563f9e7d941e401b45f126b90ad8e71039f0ecf3cc2f963 |
| Notes | In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a lowtemperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the CaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density. X-ray diffraction, metalorganic chemical vapour deposition, nitrides 11-5639/O4 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
| PQID | 1753493352 |
| PQPubID | 23500 |
| PageCount | 4 |
| ParticipantIDs | chongqing_primary_40316913 crossref_citationtrail_10_1088_1674_1056_20_12_127306 iop_primary_10_1088_1674_1056_20_12_127306 proquest_miscellaneous_1753493352 crossref_primary_10_1088_1674_1056_20_12_127306 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2011-12-01 |
| PublicationDateYYYYMMDD | 2011-12-01 |
| PublicationDate_xml | – month: 12 year: 2011 text: 2011-12-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Chinese physics B |
| PublicationTitleAlternate | Chinese Physics |
| PublicationYear | 2011 |
| Publisher | IOP Publishing |
| Publisher_xml | – name: IOP Publishing |
| References | 11 12 13 14 15 Zhao D G (2) 2010; 19 16 17 1 4 5 6 7 Ji L (3) 2010; 19 8 9 10 |
| References_xml | – ident: 1 doi: 10.1063/1.117816 – ident: 11 doi: 10.1063/1.115687 – ident: 5 doi: 10.1016/S0022-3697(73)80090-3 – ident: 7 doi: 10.1016/0022-0248(77)90186-5 – volume: 19 start-page: 124211 issn: 1674-1056 year: 2010 ident: 3 publication-title: Chin. Phys. doi: 10.1088/1674-1056/19/12/124211 – volume: 19 start-page: 057802 issn: 1674-1056 year: 2010 ident: 2 publication-title: Chin. Phys. doi: 10.1088/1674-1056/19/5/057802 – ident: 10 doi: 10.1143/JJAP.30.L1705 – ident: 12 doi: 10.1116/1.579805 – ident: 15 doi: 10.1016/0022-0248(94)90979-2 – ident: 6 doi: 10.1016/0022-0248(74)90050-5 – ident: 17 doi: 10.1016/j.apsusc.2004.10.135 – ident: 14 doi: 10.1063/1.116883 – ident: 13 doi: 10.1063/1.361398 – ident: 9 doi: 10.1149/1.2134442 – ident: 16 doi: 10.1063/1.366749 – ident: 8 doi: 10.1016/0022-0248(72)90175-3 – ident: 4 doi: 10.1063/1.1652845 |
| SSID | ssj0061023 ssib054405859 ssib000804704 |
| Score | 1.9170631 |
| Snippet | In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a lowtemperature GaN buffer layer on a c-plane sapphire... In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane... |
| SourceID | proquest crossref iop chongqing |
| SourceType | Aggregation Database Enrichment Source Index Database Publisher |
| StartPage | 400 |
| SubjectTerms | Buffer layers Chemical vapor deposition Coalescing Density Gallium nitrides GaN Grain size Monitors Nucleation Sapphire 化学气相沉积法 反射率测量 外延层生长 显微镜观测 有机金属 氮化镓 蓝宝石衬底 |
| Title | The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition |
| URI | http://lib.cqvip.com/qk/85823A/201112/40316913.html http://iopscience.iop.org/1674-1056/20/12/127306 https://www.proquest.com/docview/1753493352 |
| Volume | 20 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| journalDatabaseRights | – providerCode: PRVIOP databaseName: IOP Science Platform customDbUrl: eissn: 2058-3834 dateEnd: 99991231 omitProxy: false ssIdentifier: ssj0061023 issn: 1674-1056 databaseCode: IOP dateStart: 20080101 isFulltext: true titleUrlDefault: https://iopscience.iop.org/ providerName: IOP Publishing |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1bS91AEB6sUOhLb7b0aFtWKD4IOeaySTaPpdRKQduCgg-FZa8qapJ6coT213dmkxVEoRb2IYS9JLszszs7M98AfEibvLRcmCTjhie8Ek2ihNdJQN_P09rWAb54_6DaO-Jfj8vjFYhJEM-6fpL8c3wcLflVzRPKD496-k6WY0GiJIxt2vwpYu_b9yh6K8IhIA0rNokhwajl3d8NISqcdu3JL9wnbu1Mj3D4O-I57Dm7z-BHjNwZXU3O58tBz82fu0COD_6d5_B0OoCyjyPFvIAV176Ex8ER1CzW4CfSDZucPFjn2UL1Pd1fM2T9q7MxARPD8kUdsBNU4YdTpn-zS0eXQCGs0zAzYRCwa9XjaMy66Bn2Co52Px9-2kumDAyJKRo-JCpNHfdWZAQLyJWwqO0VvnG1bXjmUDXTvPRZXukmVVa4muzKPnXGF8bkHnn7Nay2XeveAKvxw7X1qdC64KVW2mgcI9cZUkZVOj6D9ZuVkP2ItCE5ipyqyYoZlHFppJmwyymFxoUMNnQhJE2rpGmVOb7J5TitM9i5aRf7_FeLbVypB1feulX53kqyt34Gm5GSJLIv2WRU67rlQhJQKm8o8G39f0begCfhcjv41byF1eFq6d7h6WjQ7wNH_AUlf_2K |
| linkProvider | IOP Publishing |
| linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1Lb9QwEB61RUVceBQQWx41EuoBKbt5OIl9RNCl5bH00Eo9IFl-tqglCd0sEvx6xk6yUmkRVEg5RJHHdmbGY489_gbgRczT3FCmo4RqGtGC8Ugyp6KAvp_GpSkDfPHHWbF7SN8d5UcrsLO8C1M3vekf42sHFNyxsA-IYxMfNx_5hPHouE-SFB_U0mLSGLcKN_Is5z6Rwd6n_cEgFx6dwPtdA91wUfiPdXmchZO6Ov6Gs8eF-WoV-3TJaIeZaHqnixiZBwBDH4ByOl60aqx__gbv-N8_eRdu92tV8qojugcrttqA9RAzquf34TOqGOnjQUjtyFw2jd_qJmglzr90uZoIPm_ljByjt9-eEPWDfLV-vyjcANVE93AF5LtssDVi7BBE9gAOpzsHr3ejPllDpDNO20jGsaXOsMQjCFLJDDqGmeO2NJwmFr04RXOXpIXisTTMlv4I2sVWu0zr1KEZeAhrVV3ZR0BK7LgyLmZKZTRXUmmFbaQqQSUqcktHsLkUj2g6UA5B0ToVPMlGkA_yErqHOffZNs5EOG5nTHjWCs9akeKXVHSsHcFkSTfU-TeKlyi9fy68faHwlYUEincEzwf1EjjS_fGNrGy9mAuPqUq5vyO3eZ2Wt-Dm_pup-LA3e_8YboUt8RCN8wTW2vOFfYprqlY9CyPmF1U9DYc |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=The+effects+of+sapphire+nitridation+on+GaN+growth+by+metalorganic+chemical+vapour+deposition&rft.jtitle=Chinese+physics+B&rft.au=Le%2C+Ling-Cong&rft.au=Zhao%2C+De-Gang&rft.au=Wu%2C+Liang-Liang&rft.au=Deng%2C+Yi&rft.date=2011-12-01&rft.issn=1674-1056&rft.volume=20&rft.issue=12&rft.spage=127306&rft_id=info:doi/10.1088%2F1674-1056%2F20%2F12%2F127306&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_1674_1056_20_12_127306 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F85823A%2F85823A.jpg |