Measurement of the Carrier Recovery Time in Semiconductor Optical Amplifier Based on Dual-Pump Four-Wave Mixing Technology

A scheme of measuring the carrier recovery time in semiconductor optical amplifiers （SOAs） based on dual pump Four-wave mixing technology is presented. The carrier recovery times under 120mA, 180mA 240mA and 300mA injected currents are measured to be 111ps, 81ps, 71ps and 53ps, respectively. The car...

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Bibliographic Details
Published inChinese physics letters Vol. 26; no. 12; pp. 133 - 135
Main Author 程乘 张新亮 张羽 周恩波 刘磊 张印 黄德修
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.12.2009
Subjects
Carriers
Conversion
Current carriers
Four-wave mixing
Pumps
Recovery time
Semiconductor optical amplifiers
半导体光放大器
恢复时间
注入电流
混频技术
载波恢复
间隔时间
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/26/12/124208

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Summary:A scheme of measuring the carrier recovery time in semiconductor optical amplifiers （SOAs） based on dual pump Four-wave mixing technology is presented. The carrier recovery times under 120mA, 180mA 240mA and 300mA injected currents are measured to be 111ps, 81ps, 71ps and 53ps, respectively. The carrier recovery time of the spacing between the two umps is also investigated. The experimental results show that the conversion efficiency keeps constant when the spacing of the two pumps varies within a small range.
Bibliography:TN914.3
11-1959/O4
TN722
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/26/12/124208