Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode - 黄健华 吕红亮 张玉明 张义门 汤晓燕 陈丰平 宋庆文 (Chinese physics B, 2011)
Keywords: Breakdown; Constraining; Electric potential; Optimization; PIN; Plates (structural members); Schottky diodes; SiC; Terminals; Voltage; 击穿电压; 合并; 模拟; 混合; 终端结构; 肖特基二极管