王园明, 罗. 张. 郭. 肖. 赵. 丁. (2015). Impacts of test factors on heavy ion single event multiple-cell upsets in nanometer-scale SRAM. Journal of semiconductors, 36(11), 63-68. https://doi.org/10.1088/1674-4926/36/11/114009
Chicago Style (17th ed.) Citation王园明, 罗尹虹 张凤祁 郭红霞 肖尧 赵雯 丁李利. "Impacts of Test Factors on Heavy Ion Single Event Multiple-cell Upsets in Nanometer-scale SRAM." Journal of Semiconductors 36, no. 11 (2015): 63-68. https://doi.org/10.1088/1674-4926/36/11/114009.
MLA (9th ed.) Citation王园明, 罗尹虹 张凤祁 郭红霞 肖尧 赵雯 丁李利. "Impacts of Test Factors on Heavy Ion Single Event Multiple-cell Upsets in Nanometer-scale SRAM." Journal of Semiconductors, vol. 36, no. 11, 2015, pp. 63-68, https://doi.org/10.1088/1674-4926/36/11/114009.
Warning: These citations may not always be 100% accurate.