Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

The effects of the physical damages induced by heavy ion irradiation on the performance of partiallydepleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are observed due to the random strike of heavy ions. A decrease of the saturation curren...

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Bibliographic Details
Published inJournal of semiconductors Vol. 36; no. 11; pp. 39 - 43
Main Author 武唯康 安霞 谭斐 冯慧 陈叶华 刘静静 张兴 黄如
Format Journal Article
LanguageEnglish
Published Chinese Institute of Electronics 01.11.2015
Subjects
Damage
Devices
displacement damages
Drains
heavy ion
Ion irradiation
PDSOI
performance degradation
Semiconductors
SOI器件
Strikes
Threshold voltage
Transconductance
物理损伤
超深亚微米
身体接触
重离子照射
重离子辐照
阈值电压
饱和电流
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ISSN1674-4926
DOI10.1088/1674-4926/36/11/114004

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Summary:The effects of the physical damages induced by heavy ion irradiation on the performance of partiallydepleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are observed due to the random strike of heavy ions. A decrease of the saturation current and transconductance,and an enhanced gate-induced drain leakage current are observed, which are mainly attributed to the displacement damages that may be located in the channel, the depletion region of the drain/body junction or the gate-to-drain overlap region. Further, PDSOI devices with and without body contact are compared, which reveals the differences in the threshold voltage shift, the drain-induced barrier lowing effect, the transconductance and the kink effect. The results may provide a guideline for radiation hardened design.
Bibliography:The effects of the physical damages induced by heavy ion irradiation on the performance of partiallydepleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are observed due to the random strike of heavy ions. A decrease of the saturation current and transconductance,and an enhanced gate-induced drain leakage current are observed, which are mainly attributed to the displacement damages that may be located in the channel, the depletion region of the drain/body junction or the gate-to-drain overlap region. Further, PDSOI devices with and without body contact are compared, which reveals the differences in the threshold voltage shift, the drain-induced barrier lowing effect, the transconductance and the kink effect. The results may provide a guideline for radiation hardened design.
11-5781/TN
Wu Weikang,An Xia,Tan Fei,Feng Hui,Chen Yehua,Liu Jingjing,Zhang Xing,Huang Ru （Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China）
heavy ion; displacement damages; PDSOI; performance degradation
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SourceType-Scholarly Journals-1
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/11/114004