黄如, 武. 安. 谭. 冯. 陈. 刘. 张. (2015). Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices. Journal of semiconductors, 36(11), 39-43. https://doi.org/10.1088/1674-4926/36/11/114004
Chicago Style (17th ed.) Citation黄如, 武唯康 安霞 谭斐 冯慧 陈叶华 刘静静 张兴. "Effects of Heavy Ion Irradiation on Ultra-deep-submicron Partially-depleted SOI Devices." Journal of Semiconductors 36, no. 11 (2015): 39-43. https://doi.org/10.1088/1674-4926/36/11/114004.
MLA (9th ed.) Citation黄如, 武唯康 安霞 谭斐 冯慧 陈叶华 刘静静 张兴. "Effects of Heavy Ion Irradiation on Ultra-deep-submicron Partially-depleted SOI Devices." Journal of Semiconductors, vol. 36, no. 11, 2015, pp. 39-43, https://doi.org/10.1088/1674-4926/36/11/114004.
Warning: These citations may not always be 100% accurate.